Морозов И.А. — Лаборатория возобновляемых источников энергии

Морозов Иван Александрович

кандидат технических наук

младший научный сотрудник

CV

Образование

2020

Санкт-Петербургский Государственный Электротехнический Университет «ЛЭТИ» им. В.И. Ульянова
Диссертация на тему «Физико-технологические основы процессов микроструктурирования для создания вертикально-ориентированных фотопреобразовательных структур на основе кремния»
Степень кандидата технических наук
Специальность: 05.27.06 — Технология и оборудования для производства полупроводников, материалов и приборов электронной техники.

Научный руководитель: д.т.н. Гудовских Александр Сергеевич

2012

Санкт-Петербургский Государственный Политехнический Университет, Физико-Технический факультет, кафедра микроэлектроники.

Диплом магистра.

2010

Диплом бакалавра.

Научная и педагогическая деятельность

2011-2012 ФТИ им. Иоффе, Лаборант

2012-настоящее время Санкт-Петербургский национальный исследовательский Академический университет: последовательно в должностях: лаборанта и младшего научного сотрудника

Награды, стипендии и гранты

2012	Диплом конференции ФизикА.СПБ ученых, молодых кандидатов наук.
2015	Победитель конкурса грантов Санкт-Петербурга для студентов, аспирантов, молодых
2017	Диплом за лучшую презентацию конференции SPbOPEN 2017.

Участие в конференциях

EMRS Spring Meeting, Strasbourg, France, 27-31 May 2013. Стендовый

4th International School and Conference «Saint-Petersburg OPEN 2017» St. Petersburg, Russia, April 3–6, 2017. Стендовый

27th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS) 21-25 August 2017, Seoul, Korea Устный

Область научных интересов

Полупроводниковые материалы и наноструктуры (методы получения, исследования свойств, приборы на их основе), плазмохимическое травление и осаждение.

Публикации

Последнее обновление: 16.10.2022
Всего публикаций: 75

#2022

Low-Temperature Plasma Deposition of III–V Compounds on Silicon for Multijunction Solar Cells

Gudovskikh Alexander S., Kudryashov Dmitri A., Baranov Artem I., Uvarov Alexander V., Morozov Ivan A., Monastyrenko Anatoliy O., Maksimova Alina A., Nashchekin Alexey V., Vyacheslavova Ekaterina A., Nevedomskiy Vladimir N.

ACS Applied Energy Materials, vol. 5(5), pp. 5356-5366 , 2022

[DOI:10.1021/acsaem.1c02691] [IF:4.54] [SJR:1.495] [Q1]

Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon

Maksimova Alina A., Uvarov Alexander V., Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitri A., Vyacheslavova Ekaterina A., Morozov Ivan A., Le Gall Sylvain, Kleider Jean-Paul

ACS Applied Energy Materials, vol. 5(5), pp. 5367-5373 , 2022

[DOI:10.1021/acsaem.1c02704] [IF:4.54] [SJR:1.495] [Q1]

Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives

Vyacheslavova Ekaterina A., Morozov Ivan A., Kudryashov Dmitri A., Uvarov Alexander V., Baranov Artem I., Maksimova Alina A., Abolmasov Sergey N., Gudovskikh Alexander S.

ACS Omega, vol. 7(7), pp. 6053-6057 , 2022

[DOI:10.1021/acsomega.1c06435] [IF:3.01] [SJR:0.767] [Q1]

Large-scale flexible membrane with resonant silicon nanowires for infrared visualization via efficient third harmonic generation

Nikolaeva Anna, Mastalieva Viktoria, Gudovskikh Alexander S., Morozov Ivan A., Fedorov Vladimir V., Petrov Mihail, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Applied Physics Letters, vol. 120(15), pp. 151102 , 2022

[DOI:10.1063/5.0088217] [IF:3.81] [SJR:1.343] [Q1]

Persistence of plasmids targeted by CRISPR interference in bacterial populations

Mamontov Viktor, Martynov Alexander, Morozova Natalia, Bukatin Anton, Staroverov Dmitry B., Lukyanov Konstantin A., Ispolatov Yaroslav, Semenova Ekaterina, Severinov Konstantin

Proceedings of the National Academy of Sciences, vol. 119(15), pp. Proceedings of the National Academy of Sciences , 2022

[DOI:10.1073/pnas.2114905119]

#2021

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Gudovskikh Alexander, Kudryashov Dmitry, Baranov Artem, Uvarov Alexander, Morozov Ivan, Maksimova Alina, Vyacheslavova Ekaterina, Kirilenko Demid, Mozharov Alexey

Physica Status Solidi (A) Applications and Materials Science, vol. 218(22), pp. 2170061 , 2021

[DOI:10.1002/pssa.202170061] [IF:1.86] [SJR:0.527] [Q2]

Silicon nanowire/polymer membrane for infrared visualization via third-harmonic generation

Nikolaeva Anna, Fedorov Vladimir V., Gudovskikh Alexander S., Morozov Ivan A., Mastalieva Viktoria, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Journal of Physics: Conference Series, vol. 2015(1), pp. 012096 , 2021

[DOI:10.1088/1742-6596/2015/1/012096] [IF:0.55] [SJR:0.21] [Q4]

Study of nonlinear optical phenomena in silicon nanowires

Mastalieva V A, Neplokh V, Morozov A I, Nikolaeva A A, Gudovskikh A S, Mukhin I S, Makarov S V

Journal of Physics: Conference Series, vol. 2086(1), pp. 012023 , 2021

[DOI:10.1088/1742-6596/2086/1/012023] [IF:0.55] [SJR:0.21] [Q4]

Conformality of a-Si:H deposited by low temperature PECVD for solar cells application

Uvarov A V, Baranov A I, Morozov I A, Kudryashov D A, Maksimova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012041 , 2021

[DOI:10.1088/1742-6596/2086/1/012041] [IF:0.6] [SJR:0.227] [Q3]

The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching

Baranov A I, Kudyashov D A, Morozov I A, Shugurov K Yu, Uvarov A V, Maximova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012078 , 2021

[DOI:10.1088/1742-6596/2086/1/012078] [IF:0.6] [SJR:0.227] [Q3]

Study of GaP/Si electron-selective contact deposited by plasma

Maksimova A A, Baranov A I, Uvarov A V, Gudovskikh A S, Kudryashov D A, Morozov I A, Bogdanova M V

Journal of Physics: Conference Series, vol. 2086(1), pp. 012091 , 2021

[DOI:10.1088/1742-6596/2086/1/012091] [IF:0.6] [SJR:0.227] [Q3]

Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature

Uvarov A V, Morozov I A, Baranov A I, Maximova A A, Vyacheslavova E A, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2103(1), pp. 012122 , 2021

[DOI:10.1088/1742-6596/2103/1/012122] [IF:0.6] [SJR:0.227] [Q3]

Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films

Kudriashov D. A., Maksimova A. A., Vyacheslavova E. A., Uvarov A. V., Morozov I. A., Baranov A. I., Monastyrenko A. O., Gudovskikh A. S.

Semiconductors, vol. 55(4), pp. 410-414 , 2021

[DOI:10.1134/s1063782621040072] [IF:0.76] [SJR:0.298] [Q3]

Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD

Uvarov A. V., Baranov A. I., Vyacheslavova E. A., Kalyuzhnyi N. A., Kudryashov D. A., Maksimova A. A., Morozov I. A., Mintairov S. A., Salii R. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(10), pp. 730-733 , 2021

[DOI:10.1134/s1063785021070270] [IF:1.01] [SJR:0.446] [Q2]

Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction

Baranov A. I., Kudryashov D. A., Uvarov A. V., Morozov I. A., Maksimova A. A., Vyacheslavova E. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(11), pp. 785-788 , 2021

[DOI:10.1134/s1063785021080162] [IF:1.01] [SJR:0.446] [Q2]

Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

Кудряшов Д.А., Максимова А.А., Вячеславова Е.А., Уваров А.В., Морозов И.А., Баранов А.И., Монастыренко А.О., Гудовских А.С.

Физика и техника полупроводников, vol. 55(4), pp. 360 , 2021

[DOI:10.21883/FTP.2021.04.50741.9561]

Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

Уваров А.В., Баранов А.И., Вячеславова Е.А., Калюжный Н.А., Кудряшов Д.А., Максимова А.А., Морозов И.А., Минтаиров С.А., Салий Р.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(14), pp. 51 , 2021

[DOI:10.21883/PJTF.2021.14.51189.18781] [IF:0.82] [SJR:0.306] [Q3]

Исследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(16), pp. 24 , 2021

[DOI:10.21883/PJTF.2021.16.51324.18779] [IF:0.82] [SJR:0.306] [Q3]

Исследование диодов Шоттки на основе массива кремниевых волокон, полученных сухим криогенным травлением

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Шугуров К.Ю., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(18), pp. 47 , 2021

[DOI:10.21883/PJTF.2021.18.51474.18855] [IF:0.82] [SJR:0.306] [Q3]

Microfluidic Characterization of Red Blood Cells Microcirculation under Oxidative Stress

Besedina Nadezhda A., Skverchinskaya Elisaveta A., Ivanov Alexander S., Kotlyar Konstantin P., Morozov Ivan A., Filatov Nikita A., Mindukshev Igor V., Bukatin Anton S.

Cells, vol. 10(12), pp. 3552 , 2021

[DOI:10.3390/cells10123552] [IF:4.33] [SJR:1.22] [Q1]

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Neplokh Vladimir, Fedorov Vladimir, Mozharov Alexey, Kochetkov Fedor, Shugurov Konstantin, Moiseev Eduard, Amador-Mendez Nu\~no, Statsenko Tatiana, Morozova Sofia, Krasnikov Dmitry, Nasibulin Albert G., Islamova Regina, Cirlin George, Tchernycheva Maria, Mukhin Ivan

Nanomaterials, vol. 11(10), pp. 2549 , 2021

[DOI:10.3390/nano11102549] [IF:4.92] [SJR:0.919] [Q1]

#2020

Study of GaP Nucleation Layers Grown on Si by Plasma-Enhanced Atomic Layer Deposition

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Bukatin Anton S., Baranov Artem I., Kudryashov Dmitry A., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Zubkov Vasily I., Yakovlev George E., Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900532 , 2020

[DOI:10.1002/pssa.201900532] [IF:1.97] [SJR:0.532] [Q2]

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov Dmitry A., Gudovskikh Alexander S., Baranov Artem I., Morozov Ivan A., Monastyrenko Anatoly O.

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900534 , 2020

[DOI:10.1002/pssa.201900534] [IF:1.97] [SJR:0.532] [Q2]

The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching

Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Baranov Artem, Sivakov Vladimir, Kudryashov Dmitri

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900535 , 2020

[DOI:10.1002/pssa.201900535] [IF:1.97] [SJR:0.532] [Q2]

Multijunction solar cells concept based on GaP/Si nanostructures

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Zelentsov K. S.

Materials Today: Proceedings, vol. 21, pp. 47—52 , 2020

[DOI:10.1016/j.matpr.2019.07.655] [IF:1.24] [SJR:0.341] [-]

GaNP-based photovoltaic device integrated on Si substrate

Dvoretckaia Liliia N., Bolshakov Alexey D., Mozharov Alexey M., Sobolev Maxim S., Kirilenko Demid A., Baranov Artem I., Mikhailovskii Vladimir Yu, Neplokh Vladimir V., Morozov Ivan A., Fedorov Vladimir V., Mukhin Ivan S.

Solar Energy Materials and Solar Cells, vol. 206, pp. 110282 , 2020

[DOI:10.1016/j.solmat.2019.110282] [IF:7.24] [SJR:1.839] [Q1]

Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

Uvarov A. V., Gudovskikh A. S., Nevedomskiy V. N., Baranov A. I., Kudryashov D. A., Morozov I. A., Kleider J. P.

Journal of Physics D: Applied Physics, vol. 53(34), , 2020

[DOI:10.1088/1361-6463/ab8bfd]

Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD

Baranov A. I., Uvarov A. V., Kudryashov D. A., Morozov I. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1482(1), pp. 12017 , 2020

[DOI:10.1088/1742-6596/1482/1/012017] [IF:0.55] [SJR:0.21] [Q4]

Application of selective contacts for study of silicon surface degradation

Kudryashov D A, Maksimova A A, Baranov A I, Uvarov A V, Morozov I A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695, pp. 012084 , 2020

[DOI:10.1088/1742-6596/1695/1/012084] [IF:0.55] [SJR:0.21] [Q4]

Optical properties of dry etched vertically aligned silicon structures with different geometry

Vyacheslavova E.A., Morozov I.A., Gudovskikh A S, Uvarov A V, Baranov A I, Kudryashov D A

Journal of Physics: Conference Series, vol. 1695(1), pp. 12085 , 2020

[DOI:10.1088/1742-6596/1695/1/012085] [IF:0.55] [SJR:0.21] [Q4]

Capacitance characterization of silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov, D A, Dvoretckaia, L N, Morozov, I A, Uvarov, A V, Vyacheslavova, E A, Shugurov, K Yu, Gudovskikh, A S

Journal of Physics: Conference Series, vol. 1695, pp. 12089 , 2020

[DOI:10.1088/1742-6596/1695/1/012089] [IF:0.55] [SJR:0.21] [Q4]

Defect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition

Baranov A.I., Morozov I.A., Uvarov A V, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695(1), pp. 12203 , 2020

[DOI:10.1088/1742-6596/1695/1/012203] [IF:0.55] [SJR:0.21] [Q4]

Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov D. A., Morozov I. A., Uvarov A. V., Shugurov K. Yu, Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12089 , 2020

[DOI:10.1088/1742-6596/1697/1/012060] [IF:0.55] [SJR:0.21] [Q4]

Formation of SiO2hard mask using dry etching and nanosphere lithography

Vyacheslavova E. A., Morozov I. A., Kudryashov D. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12188 , 2020

[DOI:10.1088/1742-6596/1697/1/012188] [IF:0.55] [SJR:0.21] [Q4]

Study of Latex sphere mask dry etching in oxygen

Morozov I. A., Vyacheslavova K. A., Gudovskikh A. S., Uvarov A. V., Baranov A. I., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12192 , 2020

[DOI:10.1088/1742-6596/1697/1/012192] [IF:0.55] [SJR:0.21] [Q4]

Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

Кудряшов Д.А., Гудовских А.С., Максимова А.А., Баранов А.И., Уваров А.В., Морозов И.А.

Письма в журнал технической физики, vol. 46(24), pp. 37 , 2020

[DOI:10.21883/PJTF.2020.24.50427.18478] [IF:0.82] [SJR:0.306] [Q3]

#2019

Reconfigurable Near-field Enhancement with Hybrid Metal-Dielectric Oligomers

Sun Yali, Sinev Ivan, Zalogina Anastasia, Ageev Eduard, Shamkhi Hadi, Komissarenko Filipp, Morozov Ivan, Lepeshov Sergey, Milichko Valentin, Makarov Sergey, Mukhin Ivan, Zuev Dmitry

Laser and Photonics Reviews, vol. 13(2), pp. 1800274 , 2019

[DOI:10.1002/lpor.201800274] [IF:11.52] [SJR:4.014] [Q1]

Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Zelentsov Kirill S., Jaffre Alexandre, Le Gall Sylvain, Darga Arouna, Brezard-Oudot Aurore, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 216(10), pp. 1800617 , 2019

[DOI:10.1002/pssa.201800617] [IF:1.86] [SJR:0.527] [Q2]

Inkjet assisted fabrication of planar biocompatible memristors

Illarionov Georgii A., Kolchanov Denis S., Kuchur Oleg A., Zhukov Mikhail V., Sergeeva Ekaterina, Krishtop Vladimir V., Vinogradov Alexandr V., Morozov Maxim I.

RSC Advances, vol. 9(62), pp. 35998—36004 , 2019

[DOI:10.1039/c9ra08114c] [IF:3.27] [SJR:0.736] [Q1]

Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures

Kudryashov Dmitry, Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Kotlyar Konstantin, Lihachev Alexey, Nashchekin Alexei, Pavlov Sergey

AIP Conference Proceedings, vol. 2064(1), pp. 30007 , 2019

[DOI:10.1063/1.5087669] [IF:0.42] [SJR:0.19]

Nanosphere lithography on silicon oxide for high aspect ratio cryo etching of vertically-align silicon structures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12093 , 2019

[DOI:10.1088/1742-6596/1410/1/012093] [IF:0.6] [SJR:0.227] [Q3]

Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD

Baranov A. I., Morozov I. A., Uvarov A. V., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12116 , 2019

[DOI:10.1088/1742-6596/1410/1/012116] [IF:0.6] [SJR:0.227] [Q3]

Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

Kryzhanovskaya N. V., Moiseev E. I., Zubov F. I., Mozharov A. M., Maximov M. V., Kalyuzhnyy N. A., Mintairov S. A., Kulagina M. M., Blokhin S. A., Kudryavtsev K. E., Yablonskiy A. N., Morozov S. V., Berdnikov Yu., Rouvimov S., Zhukov A. E.

Photonics Research, vol. 7(6), pp. 664 , 2019

[DOI:10.1364/prj.7.000664] [IF:6.76] [SJR:2.325] [Q1]

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

Gudovskikh A.S., Baranov A., Morozov I, Uvarov A, Kudryashov D A, Kleider J P

None, 2019

#2018

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Nikitina E. V., Bukatin A. A., Zelentsov K. S., Mukhin I. S., Levtchenko A., Le Gall S., Kleider J. P.

Journal of Renewable and Sustainable Energy, vol. 10(2), pp. 21001 , 2018

[DOI:10.1063/1.5000256] [IF:1.81] [SJR:0.483] [Q3]

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitry A., Lazarenko Alexandra A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Pirogov Evgeny V., Sobolev Maxim S., Zelentsov Kirill S., Egorov Anton Yu, Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Journal of Applied Physics, vol. 123(16), pp. 161418 , 2018

[DOI:10.1063/1.5011371] [IF:2.42] [SJR:0.728] [Q2]

InGaN/GaN QDs Nanorods: Processing and Properties

Kotlyar K. P., Soshnikov I. P., Morozov I. A., Berezovskaya T. N., Kryzhanovskaya N. V., Kudryashov D. A., Lysak V. V.

Semiconductors, vol. 52(16), pp. 2096—2098 , 2018

[DOI:10.1063/1.5087668] [IF:0.76] [SJR:0.298] [Q3]

Effect of temperature on dry etching of III-V structures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Kotlyar K. P., Shubina K. Y.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41031 , 2018

[DOI:10.1088/1742-6596/1124/4/041031] [IF:0.6] [SJR:0.227] [Q3]

Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

Baranov A. I., Gudovskikh A. S., Kudryashov D. A., Morozov I. A., Mozharov A. M., Zelentsov K. S.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41034 , 2018

[DOI:10.1088/1742-6596/1124/4/041034] [IF:0.6] [SJR:0.227] [Q3]

Silicon doping of GaP layers grown by time-modulated PECVD

Baranov A. I., Morozov I. A., Uvarov A. V., Yakovlev G. E., Kleider J. P.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41036 , 2018

[DOI:10.1088/1742-6596/1124/4/041036] [IF:0.6] [SJR:0.227] [Q3]

Low temperature plasma enhanced deposition of GaP films on Si substrate

Gudovskikh Alexander S., Morozov Ivan A., Uvarov Alexander V., Kudryashov Dmitriy A., Nikitina Ekaterina V., Bukatin Anton S., Nevedomskiy Vladimir N., Kleider Jean-Paul

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 021302 , 2018

[DOI:10.1116/1.4999409]

Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitriy A., Zelentsov Kirill S., Bukatin Anton S., Kotlyar Konstantin P.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 02D408 , 2018

[DOI:10.1116/1.5018259]

#2017

Influence of PE-ALD of GaP on the Silicon Wafers Quality

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitriy A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Zelentsov Kirill S., Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 214(12), pp. 1700685 , 2017

[DOI:10.1002/pssa.201700685] [IF:1.86] [SJR:0.527] [Q2]

n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Nikitina Ekaterina V., Kleider Jean Paul

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 14(10), pp. 1700150 , 2017

[DOI:10.1002/pssc.201700150] [IF:0.84] [SJR:0.275] [Q3]

Multijunction a-Si:H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires

Gudovskikh A. S., Morozov I. A., Kudryashov D. A., Nikitina E. V., Sivakov V.

Materials Today: Proceedings, vol. 4(7), pp. 6797—6803 , 2017

[DOI:10.1016/j.matpr.2017.07.006] [IF:1.21] [SJR:0.304]

Influence of dry etching condition to geometry of vertically aligned silicon nanostructures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Kotlyar K. P.

Journal of Physics: Conference Series, vol. 917(5), , 2017

[DOI:10.1088/1742-6596/917/5/052030] [IF:0.6] [SJR:0.227] [Q3]

Characterization of GaP/Si heterojunctions by space charge capacitance measurements

Baranov A., Gudovskikh A.S., Morozov I A, Mozharov A, Nikitina E V, Zelentsov K S, Darga A, Gall S L, Kleider J P

None, 2017

MATERIALS TODAY: PROCEEDINGS

Chelibanov V.P., Polubotko A.M., Gudovskikh, Morozov Ivan, Kudryashov Dmitry, Nikitina, Sivakov V, Mailian, Panosyan, Yengibaryan, Mailian, Nikolskaya, Yabbarov, Zamulaeva, Zhunina, Tereshenko, Mollaev, Faustova, Severin, Drozdov, Vinogradov V, Suvorov, Balandin, Shabu

Synthesis, vol. 6930, pp. 6937 , 2017

#2016

Fabrication of Hybrid Nanostructures via Nanoscale Laser-Induced Reshaping for Advanced Light Manipulation

Zuev Dmitry A., Makarov Sergey V., Mukhin Ivan S., Milichko Valentin A., Starikov Sergey V., Morozov Ivan A., Shishkin Ivan I., Krasnok Alexander E., Belov Pavel A.

Advanced Materials, vol. 28(16), pp. 3087—3093 , 2016

[DOI:10.1002/adma.201505346] [IF:27] [SJR:10.571] [Q1]

Study of GaP/Si Heterojunction Solar Cells

Gudovskikh A. S., Zelentsov K. S., Baranov A. I., Kudryashov D. A., Morozov I. A., Nikitina E. V., Kleider J. P.

Energy Procedia, vol. 102, pp. 56—63 , 2016

[DOI:10.1016/j.egypro.2016.11.318] [IF:1.77] [SJR:0.545]

Self-adjusted all-dielectric metasurfaces for deep ultraviolet femtosecond pulse generation

Makarov S. V., Tsypkin A. N., Voytova T. A., Milichko V. A., Mukhin I. S., Yulin A. V., Putilin S. E., Baranov M. A., Krasnok A. E., Morozov I. A., Belov P. A.

Nanoscale, vol. 8(41), pp. 17809—17814 , 2016

[DOI:10.1039/c6nr04860a] [IF:7.02] [SJR:2.18] [Q1]

InGaN/GaN heterostructures with lateral confinement for light emitting diodes

Kotlyar K. P., Soshnikov B. I., Morozov I. A., Kudryashov D. A., Zelentsov K. S., Lysak V. V., Soshnikov I. P.

Journal of Physics: Conference Series, vol. 741(1), pp. 12083 , 2016

[DOI:10.1088/1742-6596/741/1/012083] [IF:0.6] [SJR:0.227] [Q3]

Thin film GaP for solar cell application

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Nikitina E. V., Kleider J. P., Myasoedov A. V., Levitskiy V.

Journal of Physics: Conference Series, vol. 741(1), pp. 12088 , 2016

[DOI:10.1088/1742-6596/741/1/012088] [IF:0.6] [SJR:0.227] [Q3]

Reversible and non-reversible tuning of hybrid optical nanoresonators

Zuev D. A., Makarov S. V., Milichko V. A., Krasnok A. E., Belov P. A., Mukhin I. S., Morozov I. A., Baranov D. G., Miroshnichenko A. E.

Proceedings of the International Conference Days on Diffraction, DD 2016 pp. 464—467 , 2016

[DOI:10.1109/DD.2016.7756895] [SJR:0.129]

Reconfigurable metal-dielectric nanodimers as component of hybrid nanophotonics

Zuev D. A., Makarov S. V., Milichko V. A., Starikov S. V., Mukhin I. S., Morozov I. A., Krasnok A. E., Belov P. A.

2016 10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2016 pp. 433—435 , 2016

[DOI:10.1109/MetaMaterials.2016.7746426] [SJR:0.128]

GaAs/InGaAsN heterostructures for multi-junction solar cells

Nikitina E. V., Gudovskikh A. S., Lazarenko A. A., Pirogov E. V., Sobolev M. S., Zelentsov K. S., Morozov I. A., Egorov A. Yu

Semiconductors, vol. 50(5), pp. 652—655 , 2016

[DOI:10.1134/S106378261605016X] [IF:0.76] [SJR:0.298] [Q3]

Etude des proprietes photoelectriques de couches de GaP deposees \`a basse temperature par des mesures de conductivite et de photocourant module

Levtchenko A., Brezard-Oudot A., Alvarez A Jaffre J, Baranov A, Morozov I, Kudryashov D A, Gudovskikh A S, Djebbour S L Gall Z, Kleider J P

None, 2016

Electronic properties of thin GaP layers grown on silicon wafers

Baranov A., Gudovskikh A.S., Morozov I, Mozharov A, Darga A, Kleider J P

None, 2016

ATOMIC LAYER DEPOSITION OF GALLIUM PHOSPHIDE FOR SILICON BASED PHOTOVOLTAICS Conclusion

Gudovskikh A S, Morozov I A, Kudryashov D A, Nikitina E V, Bukatin A S, Kleider J

None pp. 61615 , 2016

Defect characterization of GaP/Si solar cells

Gudovskikh A.S., Zelentsov K.S., Baranov A, Kudryashov D A, Morozov I A, Nikitina E V, Kleider J P

None, 2016

Том. 102. Proceedings of the E-MRS Spring Meeting Symposium T-Advanced Materials and Characterization Techniques for Solar Cells III, 2016.-Сер. Proceedings of the E-MRS Spring \ldots

Kudryashov Dmitry, Morozov Ivan, Baranov Artem, Gudovskikh Alexander, Zelentsov, \»Unal M., Turan R., Tankut A, \cColakoǧlu T, S\»okmen I, Kaminski P M, Isherwood P J M, Womack G, Walls J M, Nikitina E V, Kleider J P, Goffin N, Woolley E, Lisco F, Claudio G, Tyrer J, G\»ull\»u H H, Kuznets, Parlak M, A Zatsepin

None, 2016

#2015

Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

Bolshakov A. S., Chaldyshev V. V., Babichev A. V., Kudryashov D. A., Gudovskikh A. S., Morozov I. A., Sobolev M. S., Nikitina E. V.

Semiconductors, vol. 49(11), pp. 1400—1404 , 2015

[DOI:10.1134/S1063782615110044] [IF:0.76] [SJR:0.298] [Q3]

a-Si:H/c-Si heterojunction solar cell based on top-down silicon nanostructures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Nikitina E. V., Talkenberg F., Schleusener A., Bochmann A., Sivakov V.

Journal of Nanoelectronics and Optoelectronics, vol. 9(6), pp. 723—727 , 2015

[DOI:10.1166/jno.2014.1669] [IF:0.74] [SJR:0.171] [Q3]

#2014

Study of GaInP solar-cell interfaces by variable-flux spectral measurements

Morozov I. A., Gudovskikh A. S.

Semiconductors, vol. 48(4), pp. 459—464 , 2014

[DOI:10.1134/S1063782614040216] [IF:0.76] [SJR:0.298] [Q3]

#2012

How close can one approach the dirac point in graphene experimentally?

Mayorov Alexander S., Elias Daniel C., Mukhin Ivan S., Morozov Sergey V., Ponomarenko Leonid A., Novoselov Kostya S., Geim A. K., Gorbachev Roman V.

Nano Letters, vol. 12(9), pp. 4629—4634 , 2012

[DOI:10.1021/nl301922d] [IF:11.63] [SJR:5.786] [Q1]