Лаборатория возобновляемых источников энергии

ReneLab
spbau.ru
ReneLab
spbau.ru

Уваров Александр Вячеславович

☎ +7 (981) 198-98-35
📧 lumenlight@mail.ru

CV

Образование

09.2016–09.2020 Академический Университет,

Аспирант 01.04.10. «физика полупроводников», научный руководитель – А.С. Гудовских
09.2010-09.2015 Чувашский государственный университет им. И. Н. Ульянова, физико-математический факультет, специалист по направлению «физика»,

диплом с отличием.

Научная деятельность

С 2016г

Федеральное государственное бюджетное учреждение высшего профессионального образования и науки Санкт-Петербургский Академический Университет — научно образовательный центр нанотехнологий Российской академии наук (Академический Университет),

до 2018 года -лаборант,

лаборатория Возобновляемых источников энергии,

с 2018 года – младший научный сотрудник,

лаборатория Возобновляемых источников энергии

Степендии и гранты

  • Грант для аспирантов вузов, отраслевых и академических институтов, расположенных на территории Санкт-Петербурга 2018г

    Исполнитель в проектах, поддержанных РФФИ

    Исполнитель в проектах, поддержанных РНФ

    Участник проектов ФЦП

Участие в конференциях

Многократный участник международных конференций, в том числе

  1. A V Uvarov, A S Gudovskikh. Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer // 4th International School and Conference «Saint-Petersburg OPEN 2017» St. Petersburg, Russia, April 3–6, 2017, Saint-Petersburg
  2. V. Uvarov, A. S. Gudovskikh, Optical emission spectroscopy of gallium phosphide plasma enhanced atomic layer deposition // International Youth Conference PhysicA.SPb/2017,October 24-26, 2017, Saint-Petersburg
  3. A V Uvarov, A S Gudovskikh, V V Fedorov. Investigation of the effect of deposition conditions on the structural properties of µc-Si:H // 5th International School and Conference «Saint Petersburg OPEN 2018» April 2 — 5, 2018, Saint-Petersburg

Область научных интересов

Плазмохимическое осаждение, физика полупроводников, фотоэлектрические преобразователи.

Увлечения

Фортепиано, микроэлектроника

Публикации

Последнее обновление: 16.10.2022
Всего публикаций: 51

#2022

Low-Temperature Plasma Deposition of III–V Compounds on Silicon for Multijunction Solar Cells
Gudovskikh Alexander S., Kudryashov Dmitri A., Baranov Artem I., Uvarov Alexander V., Morozov Ivan A., Monastyrenko Anatoliy O., Maksimova Alina A., Nashchekin Alexey V., Vyacheslavova Ekaterina A., Nevedomskiy Vladimir N.
ACS Applied Energy Materials, vol. 5(5), pp. 5356-5366 , 2022
[DOI:10.1021/acsaem.1c02691] [IF:4.54] [SJR:1.495] [Q1]
Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon
Maksimova Alina A., Uvarov Alexander V., Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitri A., Vyacheslavova Ekaterina A., Morozov Ivan A., Le Gall Sylvain, Kleider Jean-Paul
ACS Applied Energy Materials, vol. 5(5), pp. 5367-5373 , 2022
[DOI:10.1021/acsaem.1c02704] [IF:4.54] [SJR:1.495] [Q1]
Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives
Vyacheslavova Ekaterina A., Morozov Ivan A., Kudryashov Dmitri A., Uvarov Alexander V., Baranov Artem I., Maksimova Alina A., Abolmasov Sergey N., Gudovskikh Alexander S.
ACS Omega, vol. 7(7), pp. 6053-6057 , 2022
[DOI:10.1021/acsomega.1c06435] [IF:3.01] [SJR:0.767] [Q1]

#2021

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires
Gudovskikh Alexander, Kudryashov Dmitry, Baranov Artem, Uvarov Alexander, Morozov Ivan, Maksimova Alina, Vyacheslavova Ekaterina, Kirilenko Demid, Mozharov Alexey
Physica Status Solidi (A) Applications and Materials Science, vol. 218(22), pp. 2170061 , 2021
[DOI:10.1002/pssa.202170061] [IF:1.86] [SJR:0.527] [Q2]
Plasma-Deposited Multilayer GaP/Si p-i-n Structure for Tandem Silicon-Based Solar Cells
Uvarov Alexander V., Gudovskikh Alexander S., Baranov Artem I., Maksimova Alina A., Kudryashov Dmitriy A., Vyacheslavova Ekaterina A., Yakovlev George E., Zubkov Vasily I.
ACS Applied Energy Materials, vol. 5(5), pp. 5374-5380 , 2021
[DOI:10.1021/acsaem.1c02707] [IF:4.54] [SJR:1.495] [Q1]
Conformality of a-Si:H deposited by low temperature PECVD for solar cells application
Uvarov A V, Baranov A I, Morozov I A, Kudryashov D A, Maksimova A A, Vyacheslavova E A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 2086(1), pp. 012041 , 2021
[DOI:10.1088/1742-6596/2086/1/012041] [IF:0.6] [SJR:0.227] [Q3]
The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching
Baranov A I, Kudyashov D A, Morozov I A, Shugurov K Yu, Uvarov A V, Maximova A A, Vyacheslavova E A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 2086(1), pp. 012078 , 2021
[DOI:10.1088/1742-6596/2086/1/012078] [IF:0.6] [SJR:0.227] [Q3]
Study of GaP/Si electron-selective contact deposited by plasma
Maksimova A A, Baranov A I, Uvarov A V, Gudovskikh A S, Kudryashov D A, Morozov I A, Bogdanova M V
Journal of Physics: Conference Series, vol. 2086(1), pp. 012091 , 2021
[DOI:10.1088/1742-6596/2086/1/012091] [IF:0.6] [SJR:0.227] [Q3]
Investigation of defects in structures based on BP/Si heterojunction
Maksimova A A, Baranov A I, Uvarov A V, Kudryashov D A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 2103(1), pp. 012088 , 2021
[DOI:10.1088/1742-6596/2103/1/012088] [IF:0.6] [SJR:0.227] [Q3]
Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature
Uvarov A V, Morozov I A, Baranov A I, Maximova A A, Vyacheslavova E A, Kudryashov D A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 2103(1), pp. 012122 , 2021
[DOI:10.1088/1742-6596/2103/1/012122] [IF:0.6] [SJR:0.227] [Q3]
Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films
Kudriashov D. A., Maksimova A. A., Vyacheslavova E. A., Uvarov A. V., Morozov I. A., Baranov A. I., Monastyrenko A. O., Gudovskikh A. S.
Semiconductors, vol. 55(4), pp. 410-414 , 2021
[DOI:10.1134/s1063782621040072] [IF:0.76] [SJR:0.298] [Q3]
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD
Uvarov A. V., Baranov A. I., Vyacheslavova E. A., Kalyuzhnyi N. A., Kudryashov D. A., Maksimova A. A., Morozov I. A., Mintairov S. A., Salii R. A., Gudovskikh A. S.
Technical Physics Letters, vol. 47(10), pp. 730-733 , 2021
[DOI:10.1134/s1063785021070270] [IF:1.01] [SJR:0.446] [Q2]
Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction
Baranov A. I., Kudryashov D. A., Uvarov A. V., Morozov I. A., Maksimova A. A., Vyacheslavova E. A., Gudovskikh A. S.
Technical Physics Letters, vol. 47(11), pp. 785-788 , 2021
[DOI:10.1134/s1063785021080162] [IF:1.01] [SJR:0.446] [Q2]
Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова
Кудряшов Д.А., Максимова А.А., Вячеславова Е.А., Уваров А.В., Морозов И.А., Баранов А.И., Монастыренко А.О., Гудовских А.С.
Физика и техника полупроводников, vol. 55(4), pp. 360 , 2021
[DOI:10.21883/FTP.2021.04.50741.9561]
Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения
Уваров А.В., Баранов А.И., Вячеславова Е.А., Калюжный Н.А., Кудряшов Д.А., Максимова А.А., Морозов И.А., Минтаиров С.А., Салий Р.А., Гудовских А.С.
Письма в журнал технической физики, vol. 47(14), pp. 51 , 2021
[DOI:10.21883/PJTF.2021.14.51189.18781] [IF:0.82] [SJR:0.306] [Q3]
Исследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости
Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Максимова А.А., Вячеславова Е.А., Гудовских А.С.
Письма в журнал технической физики, vol. 47(16), pp. 24 , 2021
[DOI:10.21883/PJTF.2021.16.51324.18779] [IF:0.82] [SJR:0.306] [Q3]
Исследование диодов Шоттки на основе массива кремниевых волокон, полученных сухим криогенным травлением
Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Шугуров К.Ю., Максимова А.А., Вячеславова Е.А., Гудовских А.С.
Письма в журнал технической физики, vol. 47(18), pp. 47 , 2021
[DOI:10.21883/PJTF.2021.18.51474.18855] [IF:0.82] [SJR:0.306] [Q3]
Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
Kochetkov Fedor M., Neplokh Vladimir, Mastalieva Viktoria A., Mukhangali Sungat, Vorob’ev Aleksandr A., Uvarov Aleksandr V., Komissarenko Filipp E., Mitin Dmitry M., Kapoor Akanksha, Eymery Joel, Amador-Mendez Nu{\~{n}}o, Durand Christophe, Krasnikov Dmitry, Nasibulin Albert G., Tchernycheva Maria, Mukhin Ivan S.
Nanomaterials, vol. 11(6), pp. 1503 , 2021
[DOI:10.3390/nano11061503] [IF:4.92] [SJR:0.919] [Q1]

#2020

Study of GaP Nucleation Layers Grown on Si by Plasma-Enhanced Atomic Layer Deposition
Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Bukatin Anton S., Baranov Artem I., Kudryashov Dmitry A., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Zubkov Vasily I., Yakovlev George E., Kleider Jean Paul
Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900532 , 2020
[DOI:10.1002/pssa.201900532] [IF:1.97] [SJR:0.532] [Q2]
The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching
Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Baranov Artem, Sivakov Vladimir, Kudryashov Dmitri
Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900535 , 2020
[DOI:10.1002/pssa.201900535] [IF:1.97] [SJR:0.532] [Q2]
Multijunction solar cells concept based on GaP/Si nanostructures
Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Zelentsov K. S.
Materials Today: Proceedings, vol. 21, pp. 47—52 , 2020
[DOI:10.1016/j.matpr.2019.07.655] [IF:1.24] [SJR:0.341] [-]
Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
Uvarov A. V., Gudovskikh A. S., Nevedomskiy V. N., Baranov A. I., Kudryashov D. A., Morozov I. A., Kleider J. P.
Journal of Physics D: Applied Physics, vol. 53(34), , 2020
[DOI:10.1088/1361-6463/ab8bfd]
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
Shugurov K. Yu, Mozharov A. M., Bolshakov A. D., Fedorov V. V., Sapunov G. A., Shtrom I. V., Uvarov A. V., Kudryashov D. A., Baranov A. I., Yu Mikhailovskii V., Neplokh V. V., Tchernycheva M., Cirlin G. E., Mukhin I. S.
Nanotechnology, vol. 31(24), pp. 244003 , 2020
[DOI:10.1088/1361-6528/ab76f2] [IF:3.73] [SJR:0.926] [Q1]
Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
Baranov A. I., Uvarov A. V., Kudryashov D. A., Morozov I. A., Gudovskikh A. S.
Journal of Physics: Conference Series, vol. 1482(1), pp. 12017 , 2020
[DOI:10.1088/1742-6596/1482/1/012017] [IF:0.55] [SJR:0.21] [Q4]
GaN nanowires/ p-Si interface passivation by hydrogen plasma treatment
Shugurov K., Mozharov A. M., Bolshakov A. D., Fedorov V. V., Uvarov A. V., Kudryashov D. A., Yu Mikhailovskii V., Cirlin G. E., Mukhin I. S.
Journal of Physics: Conference Series, vol. 1537(1), pp. 12012 , 2020
[DOI:10.1088/1742-6596/1537/1/012012] [IF:0.55] [SJR:0.21] [Q4]
Study of SiNx based antireflection coating for GaP/Si heterojunction solar cells
Anokhina E.V., Uvarov A.V., Gudovskikh A S
Journal of Physics: Conference Series, vol. 1695(1), pp. 12080 , 2020
[DOI:10.1088/1742-6596/1695/1/012080] [IF:0.55] [SJR:0.21] [Q4]
Application of selective contacts for study of silicon surface degradation
Kudryashov D A, Maksimova A A, Baranov A I, Uvarov A V, Morozov I A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 1695, pp. 012084 , 2020
[DOI:10.1088/1742-6596/1695/1/012084] [IF:0.55] [SJR:0.21] [Q4]
Optical properties of dry etched vertically aligned silicon structures with different geometry
Vyacheslavova E.A., Morozov I.A., Gudovskikh A S, Uvarov A V, Baranov A I, Kudryashov D A
Journal of Physics: Conference Series, vol. 1695(1), pp. 12085 , 2020
[DOI:10.1088/1742-6596/1695/1/012085] [IF:0.55] [SJR:0.21] [Q4]
Capacitance characterization of silicon nanowires formed by cryogenic dry etching
Baranov A. I., Kudryashov, D A, Dvoretckaia, L N, Morozov, I A, Uvarov, A V, Vyacheslavova, E A, Shugurov, K Yu, Gudovskikh, A S
Journal of Physics: Conference Series, vol. 1695, pp. 12089 , 2020
[DOI:10.1088/1742-6596/1695/1/012089] [IF:0.55] [SJR:0.21] [Q4]
Defect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition
Baranov A.I., Morozov I.A., Uvarov A V, Kudryashov D A, Gudovskikh A S
Journal of Physics: Conference Series, vol. 1695(1), pp. 12203 , 2020
[DOI:10.1088/1742-6596/1695/1/012203] [IF:0.55] [SJR:0.21] [Q4]
Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching
Baranov A. I., Kudryashov D. A., Morozov I. A., Uvarov A. V., Shugurov K. Yu, Gudovskikh A. S.
Journal of Physics: Conference Series, vol. 1697(1), pp. 12089 , 2020
[DOI:10.1088/1742-6596/1697/1/012060] [IF:0.55] [SJR:0.21] [Q4]
Study of Latex sphere mask dry etching in oxygen
Morozov I. A., Vyacheslavova K. A., Gudovskikh A. S., Uvarov A. V., Baranov A. I., Kudryashov D. A.
Journal of Physics: Conference Series, vol. 1697(1), pp. 12192 , 2020
[DOI:10.1088/1742-6596/1697/1/012192] [IF:0.55] [SJR:0.21] [Q4]
Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния
Кудряшов Д.А., Гудовских А.С., Максимова А.А., Баранов А.И., Уваров А.В., Морозов И.А.
Письма в журнал технической физики, vol. 46(24), pp. 37 , 2020
[DOI:10.21883/PJTF.2020.24.50427.18478] [IF:0.82] [SJR:0.306] [Q3]
Strengthening Silicon-Nitride Cutting Ceramic with Intermetallic Inclusions
Puchkin V. N., Ryzhkin A. A., Kornienko V. G., Turkin I. A., Gontarskii V. V., Dovgalev A. Yu, Atamanyuk A. A., Bichurin A. V., Konoval’chuk A. S., Uvarov A. V.
Russian Engineering Research, vol. 40(5), pp. 446—451 , 2020
[DOI:10.3103/S1068798X20050172] [IF:1.23] [SJR:0.29] [Q3]

#2019

Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Zelentsov Kirill S., Jaffre Alexandre, Le Gall Sylvain, Darga Arouna, Brezard-Oudot Aurore, Kleider Jean Paul
Physica Status Solidi (A) Applications and Materials Science, vol. 216(10), pp. 1800617 , 2019
[DOI:10.1002/pssa.201800617] [IF:1.86] [SJR:0.527] [Q2]
Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures
Kudryashov Dmitry, Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Kotlyar Konstantin, Lihachev Alexey, Nashchekin Alexei, Pavlov Sergey
AIP Conference Proceedings, vol. 2064(1), pp. 30007 , 2019
[DOI:10.1063/1.5087669] [IF:0.42] [SJR:0.19]
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
Bolshakov A. D., Fedorov V. V., Shugurov K. Yu, Mozharov A. M., Sapunov G. A., Shtrom I. V., Mukhin M. S., Uvarov A. V., Cirlin G. E., Mukhin I. S.
Nanotechnology, vol. 30(39), pp. 395602 , 2019
[DOI:10.1088/1361-6528/ab2c0c] [IF:3.54] [SJR:1.026] [Q1]
Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD
Baranov A. I., Morozov I. A., Uvarov A. V., Gudovskikh A. S.
Journal of Physics: Conference Series, vol. 1410(1), pp. 12116 , 2019
[DOI:10.1088/1742-6596/1410/1/012116] [IF:0.6] [SJR:0.227] [Q3]
Electronic transport properties of microcrystalline GaP
Uvarov A. V., Gudovskikh A. S., Vasilev A. A.
Journal of Physics: Conference Series, vol. 1410(1), pp. 12207 , 2019
[DOI:10.1088/1742-6596/1410/1/012207] [IF:0.6] [SJR:0.227] [Q3]
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
Uvarov A. V., Zelentsov K. S., Gudovskikh A. S.
Semiconductors, vol. 53(8), pp. 1075—1081 , 2019
[DOI:10.1134/S1063782619080207] [IF:0.76] [SJR:0.298] [Q3]
Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition
Gudovskikh A.S., Baranov A., Morozov I, Uvarov A, Kudryashov D A, Kleider J P
None, 2019

#2018

Si doped GaP layers grown on Si wafers by low temperature PE-ALD
Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Nikitina E. V., Bukatin A. A., Zelentsov K. S., Mukhin I. S., Levtchenko A., Le Gall S., Kleider J. P.
Journal of Renewable and Sustainable Energy, vol. 10(2), pp. 21001 , 2018
[DOI:10.1063/1.5000256] [IF:1.81] [SJR:0.483] [Q3]
Investigation of silicon wafers thermal degradation by photoluminescence decay measurements
Kudryashov Dmitry, Gudovskikh Alexander, Uvarov Alexander, Nikitina Ekaterina
AIP Conference Proceedings, vol. 2012(1), pp. 40005 , 2018
[DOI:10.1063/1.5053513] [IF:0.42] [SJR:0.19]
Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
Uvarov A. V., Gudovskikh A. S.
Journal of Physics: Conference Series, vol. 1038(1), pp. 12108 , 2018
[DOI:10.1088/1742-6596/1038/1/012108] [IF:0.6] [SJR:0.227] [Q3]
Investigation of deposition conditions on the structural properties of µc-Si:H
Uvarov A. V., Gudovskikh A. S., Fedorov V. V.
Journal of Physics: Conference Series, vol. 1124(2), pp. 22009 , 2018
[DOI:10.1088/1742-6596/1124/2/022009] [IF:0.6] [SJR:0.227] [Q3]
Temperature annealing effect on ITO film
Kotlyar K. P., Kudryashov D. A., Soshnikov I. P., Uvarov A. V., Reznik R. R.
Journal of Physics: Conference Series, vol. 1124(4), pp. 41035 , 2018
[DOI:10.1088/1742-6596/1124/4/041035] [IF:0.6] [SJR:0.227] [Q3]
Silicon doping of GaP layers grown by time-modulated PECVD
Baranov A. I., Morozov I. A., Uvarov A. V., Yakovlev G. E., Kleider J. P.
Journal of Physics: Conference Series, vol. 1124(4), pp. 41036 , 2018
[DOI:10.1088/1742-6596/1124/4/041036] [IF:0.6] [SJR:0.227] [Q3]
Low temperature plasma enhanced deposition of GaP films on Si substrate
Gudovskikh Alexander S., Morozov Ivan A., Uvarov Alexander V., Kudryashov Dmitriy A., Nikitina Ekaterina V., Bukatin Anton S., Nevedomskiy Vladimir N., Kleider Jean-Paul
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 021302 , 2018
[DOI:10.1116/1.4999409]
Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice
Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitriy A., Zelentsov Kirill S., Bukatin Anton S., Kotlyar Konstantin P.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 02D408 , 2018
[DOI:10.1116/1.5018259]

#2017

n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Nikitina Ekaterina V., Kleider Jean Paul
Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 14(10), pp. 1700150 , 2017
[DOI:10.1002/pssc.201700150] [IF:0.84] [SJR:0.275] [Q3]
Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
Uvarov A. V., Gudovskikh A. S., Kudryashov D. A.
Journal of Physics: Conference Series, vol. 917(5), , 2017
[DOI:10.1088/1742-6596/917/5/052004] [IF:0.6] [SJR:0.227] [Q3]