Федоров В.В. — Лаборатория возобновляемых источников энергии

Федоров Владимир Викторович

+7 (911) 029-84-87
burunduk.uk@gmail.com

CV

Образование

2005-2011 Санкт-Петербургский государственный университет, Физический факультет, специальность: магистр прикладных математики и физики.

2011-2014 Аспирантура Физико-технического института им. А.Ф. Иоффе РАН

Ученая степень: кандидат физико-математических наук по специальности 01.04.07 – “Физика конденсированного состояния” (утверждена ВАК 26.02.2016)

тема диссертационной работы: Изучение процессов роста, структуры и магнитных свойств эпитаксиальных гетероструктур на основе фторидов (CaF₂; MnF₂) и металлов (Co; Ni)

научный руководитель: кандидат физ.-мат. наук. С.М. Сутурин

Опыт работы

Физико-технический институт им. А.Ф. Иоффе РАН:

2008 — 2014: старший лаборант;
2014 –2017: научный сотрудник лаб. Оптической спектроскопии (лаб. С.П. Феофилова)
2013 –2016: младший научный сотрудник лаб. Физики ферроиков (лаб. А.К. Таганцева)

Санкт-Петербургский национальный исследовательский Академический университет РАН:

2016 – по настоящее время: старший научный сотрудник в лаб. возобновляемых источников энергии СПбАУ РАН (зав. лаб. И.С. Мухин)

Общая тематика работы: эпитаксиальный синтез низко размерных систем – тонкопленочных нано-гетероструктур, исследование новых физических явлений, проявляющихся в них в результате размерных эффектов, поверхностных явлений, а также взаимодействий на границах раздела различных фаз.

Основные навыки

Рост эпитаксиальных нано- и гетероструктур методом молекулярно лучевой эпитаксии (Molecular Beam Epitaxy — MBE)
Создание эпитаксиальных гетероструктур методом импульсного лазерного осаждения (Pulsed Laser Deposition – PLD и Laser-MBE)
Лабораторные методы характеризации
- Морфологии: Сканирующая атомно-силовая микроскопия (АСМ) и силовая спектроскопия
- Структуры: in-situ метод дифракции быстрых электронов (ДБЭ)
- Магнитных свойств: Магнитооптическая векторная магнитометрия на основе эффекта Керра (МОЭК), Вибрационная магнитометрия
- Спектроскопия комбинационного рассеяния света (Рамановская спектроскопия). Люминесцентная и Рамановская микроспектроскопия
Методы диагностики структурных и магнитных свойств с использованием синхротронных источников рентгеновского излучения
- Рентгеновский магнитный циркулярный дихроизм: X-ray magnetic circular dichroism (XMCD)
- Рентгеновская резонансная магнитная рефлектометрия: X-ray resonant magnetic reflectometry (XRMR)
- Рентгеновская дифракция в геометрии скользящего падения grazing incidence X-Ray diffraction (GIXD)
- Малоугловое рассеяние рентгеновских лучей в скользящей геометрии — grazing-incidence small angle X-ray scattering (GISAXS)

Область научных интересов

Создание новых тонкопленочных материалов перспективных для задач для оптоэлектронники и фотовольтаики за счет использования эпитаксиальных ростовых технологий:
- Изучение процессов эпитаксиального роста
- Развитие методов селективного эпитаксиального роста
- Исследование влияния структуры, морфологии и взаимодействий на границах раздела на электронную структуру и магнитные свойства (эффекты магнитной близости) нано-гетероструктур
Метаморфические и псевдоморфные полупроводниковые гетероструктуры А3Б5 на кремнии на основе азотсодержащих твердых растворов Ga(In)P(NAs)
Эпитаксиальные нитевидные нанокристаллы (ННК) на основе фосфидов и нитридов элементов III группы на кремнии.
- Самоиндуцированные III-нитридные ННК
- Автокаталитические ННК GaP
Эпитаксиальные гетероструктуры на основе оксидов (феррит-гранаты, оксиды железа), выращенных методом импульсного лазерного осаждения

Стипендии и гранты

Руководитель проекта Российского Фонда Фундаментальных Исследований (РФФИ), проект № 16-32-00809 мол_а. “Эффекты магнитной близости в эпитаксиальных гетероструктурах ферромагнетик / ферримагнетик на основе переходных металлов (Co, Ni), феррит-гранатов (Y₃Fe₅O₁₂) и оксидов железа (Fe₂O₃), перспективных для новых устройств спинтроники.”
Руководитель проекта Российский научный фонд (РНФ) «Проведение инициативных исследований молодыми учеными», проект № 18-72-00219 “ Процессы формирования эпитаксиальных наноструктур GaP на структурированных подложках Si”

Опыт международного научного сотрудничества

Участник международного проекта по обмену кадрами в рамках программы фонда Марии Кюри FP7-PEOPLE. Проект ONDA (Ordered hetero- and Nano-structures with Epitaxial Dielectrics for magnetic and electronics Applications) 247518—FP7-PEOPLE-2009-IRSES
Июль-сентябрь 2017г. Работа в университете г. Шеффилд, Великобритания, в рамках проекта Мегагранта 14.Y26.31.0015 “Гибридные состояния света в веществе в низкоразмерных квантовых материалах с заданными характеристиками”

Увлечения и хобби

Авиа- и автомоделирование (планера, самолеты, вертолеты и мультироторные системы). Аэрофотосъемка. Масштабные модели.

Публикации

Последнее обновление: 16.10.2022
Всего публикаций: 85

#2022

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Fedorov Vladimir V., Koval Olga Yu., Ryabov Daniil R., Fedina Sergey V., Eliseev Igor E., Kirilenko Demid A., Pidgayko Dmitry A., Bogdanov Andrey A., Zadiranov Yury M., Goltaev Alexandr S., Ermolaev Georgy A., Arsenin Aleksey V., Makarov Sergey V., Samusev Anton K., Volkov Valentyn S., Mukhin Ivan S.

ACS Applied Nano Materials, vol. 5(7), pp. 8846-8858 , 2022

[DOI:10.1021/acsanm.2c00941] [IF:3.94] [SJR:1.079] [Q1]

Single GaP nanowire nonlinear characterization with the aid of an optical trap

Bolshakov Alexey D., Shishkin Ivan, Machnev Andrey, Petrov Mihail, Kirilenko Demid A., Fedorov Vladimir V., Mukhin Ivan S., Ginzburg Pavel

Nanoscale, vol. 14(3), pp. 993-1000 , 2022

[DOI:10.1039/d1nr04790f] [IF:7.02] [SJR:2.18] [Q1]

Large-scale flexible membrane with resonant silicon nanowires for infrared visualization via efficient third harmonic generation

Nikolaeva Anna, Mastalieva Viktoria, Gudovskikh Alexander S., Morozov Ivan A., Fedorov Vladimir V., Petrov Mihail, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Applied Physics Letters, vol. 120(15), pp. 151102 , 2022

[DOI:10.1063/5.0088217] [IF:3.81] [SJR:1.343] [Q1]

Гибкие солнечные элементы на основе гетероструктур GaAs/AlGaAs с улучшенными массогабаритными характеристиками

Голтаев А.С., Воробьев А.А., Можаров А.М., Павлов А.В., Митин Д.М., Федоров В.В., Бердников Ю.С., Мухин И.С.

Письма в журнал технической физики, vol. 48(18), pp. 6 , 2022

[DOI:10.21883/pjtf.2022.18.53390.19245]

Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire

Kuznetsov Alexey, Roy Prithu, Kondratev Valeriy M., Fedorov Vladimir V., Kotlyar Konstantin P., Reznik Rodion R., Vorobyev Alexander A., Mukhin Ivan S., Cirlin George E., Bolshakov Alexey D.

Nanomaterials, vol. 12(2), pp. 241 , 2022

[DOI:10.3390/nano12020241] [IF:4.45] [SJR:0.858] [Q1]

#2021

Single GaN Nanowires for Extremely High Current Commutation

Shugurov K., Mozharov A., Sapunov G., Fedorov V.,Tchernycheva M., Mukhin Ivan

Physica Status Solidi — Rapid Research Letters, vol. 15(4), pp. 2000590 , 2021

[DOI:10.1002/pssr.202000590] [IF:2.64] [SJR:0.786] [Q1]

Work function tailoring in gallium phosphide nanowires

Sharov Vladislav, Alekseev Prokhor, Fedorov Vladimir, Nestoklon Mikhail, Ankudinov Alexander, Kirilenko Demid, Sapunov Georgy, Koval Olga, Cirlin George, Bolshakov Alexey, Mukhin Ivan

Applied Surface Science, vol. 563, pp. 150018 , 2021

[DOI:10.1016/j.apsusc.2021.150018] [IF:6.61] [SJR:1.295] [Q1]

Flexible Perovskite CsPbBr 3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones

Miroshnichenko Anna S., Deriabin Konstantin V., Baeva Maria, Kochetkov Fedor M., Neplokh Vladimir, Fedorov Vladimir V., Mozharov Alexey M., Koval Olga Yu., Krasnikov Dmitry V., Sharov Vlad A., Filatov Nikita A., Gets Dmitry S., Nasibulin Albert G., Makarov Sergey V., Mukhin Ivan S., Kukushkin Vadim Yu., Islamova Regina M.

Journal of Physical Chemistry Letters, vol. 12(39), pp. 9672—9676 , 2021

[DOI:10.1021/acs.jpclett.1c02611] [IF:6.42] [SJR:2.563] [Q1]

Directly grown crystalline gallium phosphide on sapphire for nonlinear all-dielectric nanophotonics

Khmelevskaia D., Markina D. I., Fedorov V. V., Ermolaev G. A., Arsenin A. V., Volkov V. S., Goltaev A. S., Zadiranov Yu. M., Tzibizov I. A., Pushkarev A. P., Samusev A. K., Shcherbakov A. A., Belov P. A., Mukhin I. S., Makarov S. V.

Applied Physics Letters, vol. 118(20), pp. 201101 , 2021

[DOI:10.1063/5.0048969] [IF:4.19] [SJR:1.182] [Q1]

Silicon nanowire/polymer membrane for infrared visualization via third-harmonic generation

Nikolaeva Anna, Fedorov Vladimir V., Gudovskikh Alexander S., Morozov Ivan A., Mastalieva Viktoria, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Journal of Physics: Conference Series, vol. 2015(1), pp. 012096 , 2021

[DOI:10.1088/1742-6596/2015/1/012096] [IF:0.55] [SJR:0.21] [Q4]

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

Koval Olga Yu., Fedorov Vladimir V., Bolshakov Alexey D., Eliseev Igor E., Fedina Sergey V., Sapunov Georgiy A., Udovenko Stanislav A., Dvoretckaia Liliia N., Kirilenko Demid A., Burkovsky Roman G., Mukhin Ivan S.

Nanomaterials, vol. 11(4), pp. 960 , 2021

[DOI:10.3390/nano11040960] [IF:4.92] [SJR:0.919] [Q1]

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Fedorov Vladimir V., Berdnikov Yury, Sibirev Nickolay V., Bolshakov Alexey D., Fedina Sergey V., Sapunov Georgiy A., Dvoretckaia Liliia N., Cirlin George, Kirilenko Demid A., Tchernycheva Maria, Mukhin Ivan S.

Nanomaterials, vol. 11(8), pp. 1949 , 2021

[DOI:10.3390/nano11081949] [IF:4.92] [SJR:0.919] [Q1]

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Neplokh Vladimir, Fedorov Vladimir, Mozharov Alexey, Kochetkov Fedor, Shugurov Konstantin, Moiseev Eduard, Amador-Mendez Nu\~no, Statsenko Tatiana, Morozova Sofia, Krasnikov Dmitry, Nasibulin Albert G., Islamova Regina, Cirlin George, Tchernycheva Maria, Mukhin Ivan

Nanomaterials, vol. 11(10), pp. 2549 , 2021

[DOI:10.3390/nano11102549] [IF:4.92] [SJR:0.919] [Q1]

#2020

Novel design strategy for GaAs-based solar cell by application of single-walled carbon nanotubes topmost layer

Mitin Dmitry M., Bolshakov Alexey D., Neplokh Vladimir, Mozharov Alexey M., Raudik Sergei A., Fedorov Vladimir V., Shugurov Konstantin Yu, Mikhailovskii Vladimir Yu, Rajanna Pramod M., Fedorov Fedor S., Nasibulin Albert G., Mukhin Ivan S.

Energy Science and Engineering, vol. 8(8), pp. 2938—2945 , 2020

[DOI:10.1002/ese3.713] [IF:4.07] [SJR:0.638] [Q2]

GaNP-based photovoltaic device integrated on Si substrate

Dvoretckaia Liliia N., Bolshakov Alexey D., Mozharov Alexey M., Sobolev Maxim S., Kirilenko Demid A., Baranov Artem I., Mikhailovskii Vladimir Yu, Neplokh Vladimir V., Morozov Ivan A., Fedorov Vladimir V., Mukhin Ivan S.

Solar Energy Materials and Solar Cells, vol. 206, pp. 110282 , 2020

[DOI:10.1016/j.solmat.2019.110282] [IF:7.24] [SJR:1.839] [Q1]

Deep-Subwavelength Raman Imaging of the Strained GaP Nanowires

Sharov Vladislav A., Bolshakov Alexey D., Fedorov Vladimir V., Bruyere Stephanie, Cirlin George E., Alekseev Prokhor A., Mukhin Ivan S.

Journal of Physical Chemistry C, vol. 124(25), pp. 14054—14060 , 2020

[DOI:10.1021/acs.jpcc.0c04300] [IF:4] [SJR:1.401] [Q1]

Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip

Trofimov Pavel, Pushkarev Anatoly P., Sinev Ivan S., Fedorov Vladimir V., Bruy\`ere Stephanie, Bolshakov Alexey, Mukhin Ivan S., Makarov Sergey V.

ACS Nano, vol. 14(7), pp. 8126—8134 , 2020

[DOI:10.1021/acsnano.0c01104] [IF:14.79] [SJR:5.554] [Q1]

Gallium Phosphide Nanowires in a Free-Standing, Flexible, and Semitransparent Membrane for Large-Scale Infrared-to-Visible Light Conversion

Fedorov Vladimir V., Bolshakov Alexey, Sergaeva Olga, Neplokh Vladimir, Markina Daria, Bruyere Stephanie, Saerens Gregoire, Petrov Mihail I., Grange Rachel, Timofeeva Maria, Makarov Sergey V., Mukhin Ivan S.

ACS Nano, vol. 14(8), pp. 10624—10632 , 2020

[DOI:10.1021/acsnano.0c04872] [IF:14.79] [SJR:5.554] [Q1]

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Shugurov K. Yu, Mozharov A. M., Bolshakov A. D., Fedorov V. V., Sapunov G. A., Shtrom I. V., Uvarov A. V., Kudryashov D. A., Baranov A. I., Yu Mikhailovskii V., Neplokh V. V., Tchernycheva M., Cirlin G. E., Mukhin I. S.

Nanotechnology, vol. 31(24), pp. 244003 , 2020

[DOI:10.1088/1361-6528/ab76f2] [IF:3.73] [SJR:0.926] [Q1]

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices

Kochetkov F. M., Neplokh V., Fedorov V. V., Bolshakov A. D., Sharov V. A., Eliseev I. E., Tchernycheva M., Cirlin G. E., Nasibulin A. G., Islamova R. M., Mukhin I. S.

Nanotechnology, vol. 31(46), pp. 46LT01 , 2020

[DOI:10.1088/1361-6528/abae98] [IF:3.73] [SJR:0.926] [Q1]

Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon

Fedorov V. V., Bolshakov A. D., Koval O. Yu, Sapunov G. A., Sobolev M. S., Pirogov E. V., Kirilenko D. A., Mozharov A. M., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1461(1), pp. 12039 , 2020

[DOI:10.1088/1742-6596/1461/1/012039] [IF:0.55] [SJR:0.21] [Q4]

Synthesis and characterization of GaPN/GaP heterostructures grown on silicon (001)

Koval O. Yu, Sapunov G. A., Fedorov V. V.

Journal of Physics: Conference Series, vol. 1482(1), pp. 12026 , 2020

[DOI:10.1088/1742-6596/1482/1/012026] [IF:0.55] [SJR:0.21] [Q4]

Solar cells based on GaAs and carbon nanotubes

Mitin D. M., Mozharov A. M., Raudik S. A., Fedorov V. V., Neplokh V. V., Rajanna P. M., Nasibulin A. G., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1482(1), pp. 12035 , 2020

[DOI:10.1088/1742-6596/1482/1/012035] [IF:0.55] [SJR:0.21] [Q4]

GaN nanowires/ p-Si interface passivation by hydrogen plasma treatment

Shugurov K., Mozharov A. M., Bolshakov A. D., Fedorov V. V., Uvarov A. V., Kudryashov D. A., Yu Mikhailovskii V., Cirlin G. E., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1537(1), pp. 12012 , 2020

[DOI:10.1088/1742-6596/1537/1/012012] [IF:0.55] [SJR:0.21] [Q4]

Raman spectroscopy of strained GaP nanowires

Sharov V.A., Bolshakov A.D., Fedorov V V, Mukhin I S

Journal of Physics: Conference Series, vol. 1695(1), pp. 12102 , 2020

[DOI:10.1088/1742-6596/1695/1/012102] [IF:0.55] [SJR:0.21] [Q4]

Epitaxial synthesis of single-domain gallium phosphide on silicon

Sapunov G. A., Koval O. Yu, Fedorov V. V., Bolshakov A. D.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12127 , 2020

[DOI:10.1088/1742-6596/1697/1/012127] [IF:0.55] [SJR:0.21] [Q4]

GaPN/GaP nanowire-polymer matrix: Photoluminescence study

Koval O. Yu, Fedorov V. V., Bolshakov A. D., Neplokh V. V., Strom I. V., Serov A. Yu, Mukhin I. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12157 , 2020

[DOI:10.1088/1742-6596/1697/1/012157] [IF:0.55] [SJR:0.21] [Q4]

Crystalline calcium fluoride: A record-thin insulator for nanoscale 2D electronics

Illarionov Yu Yu, Banshchikov A. G., Knobloch T., Polyushkin D. K., Wachter S., Fedorov V. V., Suturin S. M., Stoger-Pollach M., Mueller T., Vexler M. I., Sokolov N. S., Grasser T.

Device Research Conference — Conference Digest, DRC, vol. 2020-June, pp. 1—2 , 2020

[DOI:10.1109/DRC50226.2020.9135160] [IF:0.42] [SJR:0.222] [-]

Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires

Sibirev N. V., Fedorov V. V., Kirilenko D. A., Ubiyvovk E. V., Berdnikov Y. S., Bolshakov A. D., Mukhin I. S.

Semiconductors, vol. 54(14), pp. 1862—1865 , 2020

[DOI:10.1134/S1063782620140286] [IF:0.79] [SJR:0.287] [Q3]

CONTROL OF (AL, GA) P COMPOSITION IN SELF-CATALYZED NANOWIRE GROWTH.

Sibirev N.V., Fedorov V., Shtrom I V, Bolshakov A D, Berdnikov Y

Materials Physics & Mechanics, vol. 44(3), , 2020

[DOI:10.18720/MPM.4432020_4 ]

Biomechanical Properties of Blood Plasma Extracellular Vesicles Revealed by Atomic Force Microscopy

Bairamukov Viktor, Bukatin Anton, Landa Sergey, Burdakov Vladimir, Shtam Tatiana, Chelnokova Irina, Fedorova Natalia, Filatov Michael, Starodubtseva Maria

Biology, vol. 10(1), pp. 4 , 2020

[DOI:10.3390/biology10010004] [IF:5.01] [SJR:1.731] [Q1]

Structural and optical properties of self-catalyzed axially heterostructured GaPN/GaP nanowires embedded into a flexible silicone membrane

Koval Olga Yu, Fedorov Vladimir V., Bolshakov Alexey D., Fedina Sergey V., Kochetkov Fedor M., Neplokh Vladimir, Sapunov Georgiy A., Dvoretckaia Liliia N., Kirilenko Demid A., Shtrom Igor V., Islamova Regina M., Cirlin George E., Tchernycheva Maria, Serov Alexey Yu, Mukhin Ivan S.

Nanomaterials, vol. 10(11), pp. 1—15 , 2020

[DOI:10.3390/nano10112110] [IF:4.92] [SJR:0.919] [Q1]

#2019

Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition

Bolshakov Alexey D., Fedorov Vladimir V., Sibirev Nikolai V., Fetisova Marina V., Moiseev Eduard I., Kryzhanovskaya Natalia V., Koval Olga Yu, Ubyivovk Evgeniy V., Mozharov Alexey M., Cirlin George E., Mukhin Ivan S.

Physica Status Solidi — Rapid Research Letters, vol. 13(11), pp. 1900350 , 2019

[DOI:10.1002/pssr.201900350] [IF:5.29] [SJR:0.893] [Q1]

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure

Shugurov K. Yu, Reznik R. R., Mozharov A. M., Kotlyar K. P., Koval O. Yu, Osipov A. V., Fedorov V. V., Shtrom I. V., Bolshakov A. D., Kukushkin S. A., Mukhin I. S., Cirlin G. E.

Materials Science in Semiconductor Processing, vol. 90, pp. 20—25 , 2019

[DOI:10.1016/j.mssp.2018.09.024] [IF:3.29] [SJR:0.665] [Q1]

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

Bolshakov Alexey D., Fedorov Vladimir V., Koval Olga Yu, Sapunov Georgiy A., Sobolev Maxim S., Pirogov Evgeniy V., Kirilenko Demid A., Mozharov Alexey M., Mukhin Ivan S.

Crystal Growth and Design, vol. 19(8), pp. 4510—4520 , 2019

[DOI:10.1021/acs.cgd.9b00266] [IF:4.17] [SJR:1.004] [Q1]

Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon

Koval Olga Yu, Fedorov Vladimir V., Kryzhanovskaya Natalia V., Sapunov Georgiy A., Kirilenko Demid A., Pirogov Evgeniy V., Filosofov Nikolay G., Serov Aleksei Yu, Shtrom Igor V., Bolshakov Alexey D., Mukhin Ivan S.

CrystEngComm, vol. 22(2), pp. 283—292 , 2019

[DOI:10.1039/c9ce01498e] [IF:3.18] [SJR:0.814] [Q1]

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Bolshakov A. D., Fedorov V. V., Shugurov K. Yu, Mozharov A. M., Sapunov G. A., Shtrom I. V., Mukhin M. S., Uvarov A. V., Cirlin G. E., Mukhin I. S.

Nanotechnology, vol. 30(39), pp. 395602 , 2019

[DOI:10.1088/1361-6528/ab2c0c] [IF:3.54] [SJR:1.026] [Q1]

GaN-nanowire/Si solar cell: Numerical modeling, fabrication and characterization

Shugurov K. Yu, Mozharov A. M., Sapunov G. A., Fedorov V. V., Bolshakov A. D., Cirlin G. E., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1199(1), pp. 12030 , 2019

[DOI:10.1088/1742-6596/1199/1/012030] [IF:0.6] [SJR:0.227] [Q3]

Growth and optical properties of GaPN/GaP heterostructure nanowire array

Koval O. Yu, Sapunov G. A., Fedorov V. V., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1400(5), pp. 55036 , 2019

[DOI:10.1088/1742-6596/1400/5/055036] [IF:0.6] [SJR:0.227] [Q3]

Current Distribution in GaAs Solar Cell with Carbon Nanotube Transport Layer

Mitin D. M., Raudik S. A., Mozharov A. M., Bolshakov A. D., Fedorov V. V., Nepokh V. V., Mikhailovskii V. Y., Rajanna P. M., Nasibulin A. G., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1400(6), pp. 66053 , 2019

[DOI:10.1088/1742-6596/1400/6/066053] [IF:0.6] [SJR:0.227] [Q3]

AlGaAs/GaAs solar cell with CNT transport layer: Numerical simulation

Raudik S. A., Mozharov A. M., Mitin D. M., Bolshakov A. D., Fedorov V. V., Neplokh V. V., Rajanna P. M., Nasibulin A. G., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12107 , 2019

[DOI:10.1088/1742-6596/1410/1/012107] [IF:0.6] [SJR:0.227] [Q3]

Theoretical optimization of the photolithography through array of 1.2 $\mu$m silica microspheres

Dvoretckaia L. N., Mozharov A. M., Bolshakov A. D., Fedorov V. V., Vasiliev A. A., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12129 , 2019

[DOI:10.1088/1742-6596/1410/1/012129] [IF:0.6] [SJR:0.227] [Q3]

Studying surface Fermi level pinning in GaP nanowires with gradient Kelvin probe microscopy

Sharov V. A., Alekseev P. A., Fedorov V. V., Bolshakov A. D., Mukhin I. S.

IOP Conference Series: Materials Science and Engineering, vol. 699(1), pp. 12046 , 2019

[DOI:10.1088/1757-899X/699/1/012046] [IF:0.54] [SJR:0.198]

Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires

Sharov V., Bolshakov A., Fedorov V., Shugurov K. Yu, Mozharov A. M., Sapunov G. A., Mukhin I. S.

IOP Conference Series: Materials Science and Engineering, vol. 699(1), pp. 12047 , 2019

[DOI:10.1088/1757-899X/699/1/012047] [IF:0.54] [SJR:0.198]

Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes

Mitin D. M., Raudik S. A., Mozharov A. M., Bolshakov A. D., Fedorov V. V., Nepokh V. V., Rajanna P. M., Nasibulin A. G., Mukhin I. S.

Semiconductors, vol. 53(14), pp. 1926—1928 , 2019

[DOI:10.1134/S1063782619140148] [IF:0.76] [SJR:0.298] [Q3]

Fermi level pinning study at the surface of GaP nanowires

Sharov V., Alekseev P., Fedorov V., Bolshakov A.

Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019 pp. 92—92 , 2019

Modified silicone rubbers for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube transparent contact

Neplokh Vladimir, Kochetkov Fedor M., Deriabin Konstantin V., Fedorov Vladimir V., Bolshakov Alexey D., Eliseev Igor E., Mikhailovskii Vladimir Yu, Ilatovskii Daniil A., Krasnikov Dmitry V., Tchernycheva Maria, Cirlin George E., Nasibulin Albert G., Mukhin Ivan S., Islamova Regina M.

arXiv, vol. 8(11), pp. 3764—3772 , 2019

Conductive AFM study of the electronic properties of vertical GaN nanowires

VA Sharov, K Yu Shugurov, VV Fedorov, AM Mozharov

Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials.—Ekaterinburg, 2019 pp. 260 , 2019

#2018

Droplet epitaxy mediated growth of GaN nanostructures on Si (111): Via plasma-assisted molecular beam epitaxy

Fedorov V. V., Bolshakov A. D., Kirilenko D. A., Mozharov A. M., Sitnikova A. A., Sapunov G. A., Dvoretckaia L. N., Shtrom I. V., Cirlin G. E., Mukhin I. S.

CrystEngComm, vol. 20(24), pp. 3370—3380 , 2018

[DOI:10.1039/c8ce00348c] [IF:3.18] [SJR:0.814] [Q1]

Epitaxial GaN nanotripods: Morphology and crystal structure

Sapunov G. A., Bolshakov A. D., Fedorov V. V., Mozharov A. M., Kirilenko D. A., Sitnikova A. A., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1038(1), pp. 12053 , 2018

[DOI:10.1088/1742-6596/1038/1/012053] [IF:0.6] [SJR:0.227] [Q3]

GaN nanowires on Si (111) substrates via molecular beam epitaxy: Growth, electronic and optical properties

Bolshakov A. D., Fedorov V. V., Sapunov G. A., Mozharov A. M., Dvoreckaia L. N., Shugurov K., Shkoldin V., Shtrom I. V., Mukhin M. S., Cirlin G. E., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1092(1), pp. 12013 , 2018

[DOI:10.1088/1742-6596/1092/1/012013] [IF:0.6] [SJR:0.227] [Q3]

Investigation of deposition conditions on the structural properties of µc-Si:H

Uvarov A. V., Gudovskikh A. S., Fedorov V. V.

Journal of Physics: Conference Series, vol. 1124(2), pp. 22009 , 2018

[DOI:10.1088/1742-6596/1124/2/022009] [IF:0.6] [SJR:0.227] [Q3]

GaN nanostructures grown on Si(111) by PA-MBE via droplet epitaxy: SEM and HRTEM study

Sapunov G. A., Fedorov V. V., Bolshakov A. D., Mozharov A. M., Dvoreckaia L. N., Kirilenko A., Sitnikova A. A., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1124(2), pp. 22033 , 2018

[DOI:10.1088/1742-6596/1124/2/022033] [IF:0.6] [SJR:0.227] [Q3]

Fabrication method of the patterned mask for controllable growth of low-dimensional semiconductor nanostructures

Dvoretckaia L. N., Mozharov A. M., Fedorov V. V., Bolshakov A. D., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1124(2), pp. 22042 , 2018

[DOI:10.1088/1742-6596/1124/2/022042] [IF:0.6] [SJR:0.227] [Q3]

Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells

Shugurov K. U., Mozharov A. M., Sapunov G. A., Fedorov V. V., Bolshakov A. D., Mukhin I. S.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41021 , 2018

[DOI:10.1088/1742-6596/993/1/012034] [IF:0.6] [SJR:0.227] [Q3]

Structural transformations and interfacial iron reduction in heterostructures with epitaxial layers of 3D metals and Ferrimagnetic oxides

Suturin Sergey, Kaveev,rey, Korovin Aleksandr, Fedorov Vladimir, Sawada Masahiro, Sokolov Nikolai

Journal of Applied Crystallography, vol. 51(4), pp. 1069—1081 , 2018

[DOI:10.1107/S1600576718007823] [IF:2.89] [SJR:1.525] [Q1]

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

Mozharov A. M., Vasiliev A. A., Bolshakov A. D., Sapunov G. A., Fedorov V. V., Cirlin G. E., Mukhin I. S.

Semiconductors, vol. 52(4), pp. 489—492 , 2018

[DOI:10.1134/S1063782618040231] [IF:0.76] [SJR:0.298] [Q3]

Effect of the Conductive Channel Cut-Off on Operation of n +–n–n + GaN NW-Based Gunn Diode

Mozharov A. M., Vasiliev A. A., Komissarenko F. E., Bolshakov A. D., Sapunov G. A., Fedorov V. V., Cirlin G. E., Mukhin I. S.

Semiconductors, vol. 52(14), pp. 1809—1812 , 2018

[DOI:10.1134/S106378261814021X] [IF:0.76] [SJR:0.298] [Q3]

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires

Bolshakov A. D., Dvoretckaia L. N., Fedorov V. V., Sapunov G. A., Mozharov A. M., Shugurov K. Yu, Shkoldin V. A., Mukhin M. S., Cirlin G. E., Mukhin I. S.

Semiconductors, vol. 52(16), pp. 2088—2091 , 2018

[DOI:10.1134/S1063782618160054] [IF:0.76] [SJR:0.298] [Q3]

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

Fedorov V. V., Bolshakov A. D., Dvoretckaia L. N., Sapunov G. A., Kirilenko D. A., Mozharov A. M., Shugurov K. Yu, Shkoldin V. A., Cirlin G. E., Mukhin I. S.

Semiconductors, vol. 52(16), pp. 2092—2095 , 2018

[DOI:10.1134/S106378261816008X] [IF:0.76] [SJR:0.298] [Q3]

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

Fedorov V. V., Bolshakov A. D., Kirilenko D. A., Mozharov A. M., Sitnikova A. A., Sapunov G. A., Dvoretckaia L. N., Shtrom I. V., Cirlin G. E., Mukhin I. S.

Beilstein Journal of Nanotechnologyopen, vol. 20(24), pp. 3370—3380 , 2018

[DOI:10.3762/bjnano.9.17] [IF:2.4] [SJR:0.72] [Q1]

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential.

AM Mozharov, AA Vasiliev, AD Bolshakov, GA Sapunov, VV Fedorov, GE Cirlin, IS Mukhin

Semiconductors, vol. 52(4), , 2018

#2017

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Fedorov V. V., Bolshakov A. D., Mozharov A. M., Sapunov G. A., Shtrom I. V., Kirilenko D. A., Sitnikova A. A., Mukhin I. S.

Journal of Physics: Conference Series, vol. 917(3), , 2017

[DOI:10.1088/1742-6596/917/3/032040] [IF:0.6] [SJR:0.227] [Q3]

Modeling the semiconductor devices with negative differential resistance based on nitride nanowires

Mozharov A. M., Komissarenko F. E., Bolshakov A. D., Fedorov V. V., Sapunov G. A., Cirlin G. E., Mukhin I. S.

Journal of Physics: Conference Series, vol. 917(8), pp. 82017 , 2017

[DOI:10.1088/1742-6596/917/8/082017] [IF:0.6] [SJR:0.227] [Q3]

Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes

Bolshakov A.D., Mozharov Alexey, Mukhin Ivan, Sapunov G A, Fedorov V V, Dvoretckaia L N

Materials Research Express, vol. 4(12), pp. 125027 , 2017

[DOI:10.1088/2053-1591/aa9e9d] [IF:1.91] [SJR:0.365] [Q2]

Epitaxial Ni nanoparticles on CaF2(001), (110) and (111) surfaces studied by three-dimensional RHEED, GIXD and GISAXS reciprocal-space mapping techniques

Suturin S. M., Fedorov V. V., Korovin A. M., Sokolov N. S., Nashchekin A. V., Tabuchi M.

Journal of Applied Crystallography, vol. 50(3), pp. 830—839 , 2017

[DOI:10.1107/S160057671700512X] [IF:2.89] [SJR:1.525] [Q1]

#2016

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

Sokolov N. S., Fedorov V. V., Korovin A. M., Suturin S. M., Baranov D. A., Gastev S. V., Krichevtsov B. B., Maksimova K. Yu, Grunin A. I., Bursian V. E., Lutsev L. V., Tabuchi M.

Journal of Applied Physics, vol. 119(2), pp. 23903 , 2016

[DOI:10.1063/1.4939678] [IF:2.42] [SJR:0.728] [Q2]

Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

Lutsev L. V., Korovin A. M., Bursian V. E., Gastev S. V., Fedorov V. V., Suturin S. M., Sokolov N. S.

Applied Physics Letters, vol. 108(18), pp. 182402 , 2016

[DOI:10.1063/1.4948304] [IF:3.81] [SJR:1.343] [Q1]

An advanced three-dimensional RHEED mapping approach to the diffraction study of Co/MnF2/CaF2/Si(001) epitaxial heterostructures

Suturin S. M., Korovin A. M., Fedorov V. V., Valkovsky G. A., Tabuchi M., Sokolov N. S.

Journal of Applied Crystallography, vol. 49(5), pp. 1532—1543 , 2016

[DOI:10.1107/S1600576716011407] [IF:2.89] [SJR:1.525] [Q1]

Magnetic proximity effect in ferro-/ferrimagnet Co/YIG nanoheterostructures

Fedorov V.V., Gastev S.V., Korovin A M, Petrova Y, Suturin S M, Sawada M, Sokolov N S

24TH INTERNATIONAL SYMPOSIUM ‘NANOSTRUCTURES: PHYSICS AND TECHNOLOGY’ Saint Petersburg, 27 июня – 01 2016 года pp. 126—127 , 2016

#2014

Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

Illarionov Y.Y., Vexler M.I., Fedorov V V, Suturin S M, Sokolov N S

Journal of Applied Physics, vol. 115(22), pp. 223706 , 2014

[DOI:10.1063/1.4882375] [IF:2.42] [SJR:0.728] [Q2]

#2013

Magnetic anisotropy of cobalt nanoparticle 2D arrays grown on corrugated MnF 2 (1 1 0) and CaF 2 (1 1 0) surfaces

Baranov D. A., Krichevtsov B. B., Gastev S. V., Banschikov A. G., Fedorov V. V., Koshmak K. V., Suturin S. M., Sokolov N. S.

Applied Surface Science, vol. 267, pp. 196—199 , 2013

[DOI:10.1016/j.apsusc.2012.10.006] [IF:6.39] [SJR:1.23] [Q1]

Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2 nm) fluoride layer

Illarionov Yu Yu, Vexler M. I., Fedorov V. V., Suturin S. M., Sokolov N. S.

Thin Solid Films, vol. 545, pp. 580—583 , 2013

[DOI:10.1016/j.tsf.2013.07.050] [IF:1.99] [SJR:0.513] [Q2]

Proximity effects and exchange bias in Co/MnF2(111) heterostructures studied by x-ray magnetic circular dichroism

Suturin S. M., Fedorov V. V., Banshchikov A. G., Baranov D. A., Koshmak K. V., Torelli P., Fujii J., Panaccione G., Amemiya K., Sakamaki M., Nakamura T., Tabuchi M., Pasquali L., Sokolov N. S.

Journal of Physics Condensed Matter, vol. 25(4), pp. 46002 , 2013

[DOI:10.1088/0953-8984/25/4/046002] [IF:2.74] [SJR:0.936] [Q1]

Cobalt epitaxial nanoparticles on CaF 2 /Si(111): Growth process, morphology, crystal structure, and magnetic properties

Sokolov N. S., Suturin S. M., Krichevtsov B. B., Dubrovskii V. G., Gastev S. V., Sibirev N. V., Baranov D. A., Fedorov V. V., Sitnikova A. A., Nashchekin A. V., Sakharov V. I., Serenkov I. T., Shimada T., Yanase T., Tabuchi M.

Physical Review B — Condensed Matter and Materials Physics, vol. 87(12), pp. 125407 , 2013

[DOI:10.1103/PhysRevB.87.125407]

A look inside epitaxial cobalt-on-fluorite nanoparticles with three-dimensional reciprocal space mapping using GIXD, RHEED and GISAXS

Suturin S. M., Fedorov V. V., Korovin A. M., Valkovskiy G. A., Konnikov S. G., Tabuchi M., Sokolov N. S.

Journal of Applied Crystallography, vol. 46(4), pp. 874—881 , 2013

[DOI:10.1107/S0021889813008777] [IF:2.89] [SJR:1.525] [Q1]

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Vexler M. I., Tyaginov S. E., Illarionov Yu Yu, Sing Yew Kwang, Shenp Ang Diing, Fedorov V. V., Isakov D. V.

Semiconductors, vol. 47(5), pp. 686—694 , 2013

[DOI:10.1134/S1063782613050230] [IF:0.76] [SJR:0.298] [Q3]

Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

Illarionov Yu Yu, Vexler M. I., Isakov D., Fedorov V. V., Sing Yew Kwang

Technical Physics Letters, vol. 39(10), pp. 878—882 , 2013

[DOI:10.1134/S1063785013100040] [IF:1.01] [SJR:0.446] [Q2]

Proximity effects and exchange bias in Co

SUTURIN S.M., Fedorov Vladimir, S SOKOLOV, BANSHCHIKOV A G, BARANOV D A, KOSHMAK K V, TORELLI P, FUJII J, PANACCIONE G, AMEMIYA K, SAKAMAKI M, NAKAMURA T, TABUCHI M, N L PASQUALI

Journal of physics. Condensed matter, vol. 25(4), , 2013