Гудовских А.С. — Лаборатория возобновляемых источников энергии

Гудовских Александр Сергеевич

CV

Научная деятельность

2006 -…

Федеральное государственное бюджетное учреждение высшего профессионального образования и науки Санкт-Петербургский Академический Университет — научно образовательный центр нанотехнологий Российской академии наук (Академический Университет),

Лаборатория возобновляемых источников энергии

Область научных интересов: в области физики и технологии полупроводниковых фотопреобразовательных гетероструктур, в частности, свойств границ раздела, емкостной спектроскопии, технологии нанесения тонких пленок.

Образование

1999	Окончил с отличием Санкт-Петербургский государственный электротехнический университет «ЛЭТИ».
2002	Кандидат физико-математических наук по специальности 01.04.10 «Физика полупроводников».
2002-2006	Походил научную стажировку в Электротехнической лаборатории Парижа (Laboratoire de Génie Electrique de Paris CNRS) во Франции.
2014	Доктор технических наук (специальность 05.27.01 — Твердотельная электроника, радиоэлектронные компоненты, микро- и наноэлектроника, приборы на квантовых эффектах) тема: «ГРАНИЦЫ РАЗДЕЛА В ГЕТЕРОСТРУКТУРНЫХ ФОТОЭЛЕКТРИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЯХ СОЛНЕЧНОГО ИЗЛУЧЕНИЯ»

Публикации

Последнее обновление: 16.10.2022
Всего публикаций: 180

#2022

Low-Temperature Plasma Deposition of III–V Compounds on Silicon for Multijunction Solar Cells

Gudovskikh Alexander S., Kudryashov Dmitri A., Baranov Artem I., Uvarov Alexander V., Morozov Ivan A., Monastyrenko Anatoliy O., Maksimova Alina A., Nashchekin Alexey V., Vyacheslavova Ekaterina A., Nevedomskiy Vladimir N.

ACS Applied Energy Materials, vol. 5(5), pp. 5356-5366 , 2022

[DOI:10.1021/acsaem.1c02691] [IF:4.54] [SJR:1.495] [Q1]

Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon

Maksimova Alina A., Uvarov Alexander V., Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitri A., Vyacheslavova Ekaterina A., Morozov Ivan A., Le Gall Sylvain, Kleider Jean-Paul

ACS Applied Energy Materials, vol. 5(5), pp. 5367-5373 , 2022

[DOI:10.1021/acsaem.1c02704] [IF:4.54] [SJR:1.495] [Q1]

Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives

Vyacheslavova Ekaterina A., Morozov Ivan A., Kudryashov Dmitri A., Uvarov Alexander V., Baranov Artem I., Maksimova Alina A., Abolmasov Sergey N., Gudovskikh Alexander S.

ACS Omega, vol. 7(7), pp. 6053-6057 , 2022

[DOI:10.1021/acsomega.1c06435] [IF:3.01] [SJR:0.767] [Q1]

Large-scale flexible membrane with resonant silicon nanowires for infrared visualization via efficient third harmonic generation

Nikolaeva Anna, Mastalieva Viktoria, Gudovskikh Alexander S., Morozov Ivan A., Fedorov Vladimir V., Petrov Mihail, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Applied Physics Letters, vol. 120(15), pp. 151102 , 2022

[DOI:10.1063/5.0088217] [IF:3.81] [SJR:1.343] [Q1]

#2021

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Gudovskikh Alexander, Kudryashov Dmitry, Baranov Artem, Uvarov Alexander, Morozov Ivan, Maksimova Alina, Vyacheslavova Ekaterina, Kirilenko Demid, Mozharov Alexey

Physica Status Solidi (A) Applications and Materials Science, vol. 218(22), pp. 2170061 , 2021

[DOI:10.1002/pssa.202170061] [IF:1.86] [SJR:0.527] [Q2]

Plasma-Deposited Multilayer GaP/Si p-i-n Structure for Tandem Silicon-Based Solar Cells

Uvarov Alexander V., Gudovskikh Alexander S., Baranov Artem I., Maksimova Alina A., Kudryashov Dmitriy A., Vyacheslavova Ekaterina A., Yakovlev George E., Zubkov Vasily I.

ACS Applied Energy Materials, vol. 5(5), pp. 5374-5380 , 2021

[DOI:10.1021/acsaem.1c02707] [IF:4.54] [SJR:1.495] [Q1]

Silicon nanowire/polymer membrane for infrared visualization via third-harmonic generation

Nikolaeva Anna, Fedorov Vladimir V., Gudovskikh Alexander S., Morozov Ivan A., Mastalieva Viktoria, Neplokh Vladimir, Mukhin Ivan S., Makarov Sergey V.

Journal of Physics: Conference Series, vol. 2015(1), pp. 012096 , 2021

[DOI:10.1088/1742-6596/2015/1/012096] [IF:0.55] [SJR:0.21] [Q4]

Study of nonlinear optical phenomena in silicon nanowires

Mastalieva V A, Neplokh V, Morozov A I, Nikolaeva A A, Gudovskikh A S, Mukhin I S, Makarov S V

Journal of Physics: Conference Series, vol. 2086(1), pp. 012023 , 2021

[DOI:10.1088/1742-6596/2086/1/012023] [IF:0.55] [SJR:0.21] [Q4]

Conformality of a-Si:H deposited by low temperature PECVD for solar cells application

Uvarov A V, Baranov A I, Morozov I A, Kudryashov D A, Maksimova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012041 , 2021

[DOI:10.1088/1742-6596/2086/1/012041] [IF:0.6] [SJR:0.227] [Q3]

The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching

Baranov A I, Kudyashov D A, Morozov I A, Shugurov K Yu, Uvarov A V, Maximova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012078 , 2021

[DOI:10.1088/1742-6596/2086/1/012078] [IF:0.6] [SJR:0.227] [Q3]

Study of GaP/Si electron-selective contact deposited by plasma

Maksimova A A, Baranov A I, Uvarov A V, Gudovskikh A S, Kudryashov D A, Morozov I A, Bogdanova M V

Journal of Physics: Conference Series, vol. 2086(1), pp. 012091 , 2021

[DOI:10.1088/1742-6596/2086/1/012091] [IF:0.6] [SJR:0.227] [Q3]

Investigation of defects in structures based on BP/Si heterojunction

Maksimova A A, Baranov A I, Uvarov A V, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2103(1), pp. 012088 , 2021

[DOI:10.1088/1742-6596/2103/1/012088] [IF:0.6] [SJR:0.227] [Q3]

Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature

Uvarov A V, Morozov I A, Baranov A I, Maximova A A, Vyacheslavova E A, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2103(1), pp. 012122 , 2021

[DOI:10.1088/1742-6596/2103/1/012122] [IF:0.6] [SJR:0.227] [Q3]

Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films

Kudriashov D. A., Maksimova A. A., Vyacheslavova E. A., Uvarov A. V., Morozov I. A., Baranov A. I., Monastyrenko A. O., Gudovskikh A. S.

Semiconductors, vol. 55(4), pp. 410-414 , 2021

[DOI:10.1134/s1063782621040072] [IF:0.76] [SJR:0.298] [Q3]

Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD

Uvarov A. V., Baranov A. I., Vyacheslavova E. A., Kalyuzhnyi N. A., Kudryashov D. A., Maksimova A. A., Morozov I. A., Mintairov S. A., Salii R. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(10), pp. 730-733 , 2021

[DOI:10.1134/s1063785021070270] [IF:1.01] [SJR:0.446] [Q2]

Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction

Baranov A. I., Kudryashov D. A., Uvarov A. V., Morozov I. A., Maksimova A. A., Vyacheslavova E. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(11), pp. 785-788 , 2021

[DOI:10.1134/s1063785021080162] [IF:1.01] [SJR:0.446] [Q2]

Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

Кудряшов Д.А., Максимова А.А., Вячеславова Е.А., Уваров А.В., Морозов И.А., Баранов А.И., Монастыренко А.О., Гудовских А.С.

Физика и техника полупроводников, vol. 55(4), pp. 360 , 2021

[DOI:10.21883/FTP.2021.04.50741.9561]

Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

Уваров А.В., Баранов А.И., Вячеславова Е.А., Калюжный Н.А., Кудряшов Д.А., Максимова А.А., Морозов И.А., Минтаиров С.А., Салий Р.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(14), pp. 51 , 2021

[DOI:10.21883/PJTF.2021.14.51189.18781] [IF:0.82] [SJR:0.306] [Q3]

Исследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(16), pp. 24 , 2021

[DOI:10.21883/PJTF.2021.16.51324.18779] [IF:0.82] [SJR:0.306] [Q3]

Исследование диодов Шоттки на основе массива кремниевых волокон, полученных сухим криогенным травлением

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Шугуров К.Ю., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(18), pp. 47 , 2021

[DOI:10.21883/PJTF.2021.18.51474.18855] [IF:0.82] [SJR:0.306] [Q3]

#2020

Study of GaP Nucleation Layers Grown on Si by Plasma-Enhanced Atomic Layer Deposition

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Bukatin Anton S., Baranov Artem I., Kudryashov Dmitry A., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Zubkov Vasily I., Yakovlev George E., Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900532 , 2020

[DOI:10.1002/pssa.201900532] [IF:1.97] [SJR:0.532] [Q2]

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov Dmitry A., Gudovskikh Alexander S., Baranov Artem I., Morozov Ivan A., Monastyrenko Anatoly O.

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900534 , 2020

[DOI:10.1002/pssa.201900534] [IF:1.97] [SJR:0.532] [Q2]

The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching

Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Baranov Artem, Sivakov Vladimir, Kudryashov Dmitri

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900535 , 2020

[DOI:10.1002/pssa.201900535] [IF:1.97] [SJR:0.532] [Q2]

Multijunction solar cells concept based on GaP/Si nanostructures

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Zelentsov K. S.

Materials Today: Proceedings, vol. 21, pp. 47—52 , 2020

[DOI:10.1016/j.matpr.2019.07.655] [IF:1.24] [SJR:0.341] [-]

GaPAsN-based light-emitting diode on silicon

Lazarenko Alexandra A., Nikitina Ekaterina V., Gudovskikh Alexander S., Baranov Artem I., Sobolev Maxim S., Pirogov Evgeny V., Egorov Anton Yu

Optics and Laser Technology, vol. 129, pp. 106308 , 2020

[DOI:10.1016/j.optlastec.2020.106308] [IF:4.14] [SJR:0.799] [Q1]

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Baranov Artem I., Gudovskikh Alexander S., Egorov Anton Yu, Kudryashov Dmitry A., Le Gall Sylvain, Kleider Jean Paul

Journal of Applied Physics, vol. 128(2), pp. 23105 , 2020

[DOI:10.1063/1.5134681] [IF:2.75] [SJR:0.699] [Q2]

Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

Uvarov A. V., Gudovskikh A. S., Nevedomskiy V. N., Baranov A. I., Kudryashov D. A., Morozov I. A., Kleider J. P.

Journal of Physics D: Applied Physics, vol. 53(34), , 2020

[DOI:10.1088/1361-6463/ab8bfd]

Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD

Baranov A. I., Uvarov A. V., Kudryashov D. A., Morozov I. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1482(1), pp. 12017 , 2020

[DOI:10.1088/1742-6596/1482/1/012017] [IF:0.55] [SJR:0.21] [Q4]

Temperature dependence of I-V characteristics in p-Si/MoO x and n-Si/LiF/Ta selective contacts

Maksimova A A, Baranov I A, Kudryashov A D, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695, pp. 012073 , 2020

[DOI:10.1088/1742-6596/1695/1/012073] [IF:0.55] [SJR:0.21] [Q4]

Study of SiNx based antireflection coating for GaP/Si heterojunction solar cells

Anokhina E.V., Uvarov A.V., Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695(1), pp. 12080 , 2020

[DOI:10.1088/1742-6596/1695/1/012080] [IF:0.55] [SJR:0.21] [Q4]

Application of selective contacts for study of silicon surface degradation

Kudryashov D A, Maksimova A A, Baranov A I, Uvarov A V, Morozov I A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695, pp. 012084 , 2020

[DOI:10.1088/1742-6596/1695/1/012084] [IF:0.55] [SJR:0.21] [Q4]

Optical properties of dry etched vertically aligned silicon structures with different geometry

Vyacheslavova E.A., Morozov I.A., Gudovskikh A S, Uvarov A V, Baranov A I, Kudryashov D A

Journal of Physics: Conference Series, vol. 1695(1), pp. 12085 , 2020

[DOI:10.1088/1742-6596/1695/1/012085] [IF:0.55] [SJR:0.21] [Q4]

Capacitance characterization of silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov, D A, Dvoretckaia, L N, Morozov, I A, Uvarov, A V, Vyacheslavova, E A, Shugurov, K Yu, Gudovskikh, A S

Journal of Physics: Conference Series, vol. 1695, pp. 12089 , 2020

[DOI:10.1088/1742-6596/1695/1/012089] [IF:0.55] [SJR:0.21] [Q4]

Defect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition

Baranov A.I., Morozov I.A., Uvarov A V, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695(1), pp. 12203 , 2020

[DOI:10.1088/1742-6596/1695/1/012203] [IF:0.55] [SJR:0.21] [Q4]

Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov D. A., Morozov I. A., Uvarov A. V., Shugurov K. Yu, Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12089 , 2020

[DOI:10.1088/1742-6596/1697/1/012060] [IF:0.55] [SJR:0.21] [Q4]

Investigation of the temperature dependences of the I-V characteristics of p-Si/MoOxselective contacts

Maksimova A.A., Baranov A. I., Kudryashov D. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12169 , 2020

[DOI:10.1088/1742-6596/1697/1/012169] [IF:0.55] [SJR:0.21] [Q4]

Formation of SiO2hard mask using dry etching and nanosphere lithography

Vyacheslavova E. A., Morozov I. A., Kudryashov D. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12188 , 2020

[DOI:10.1088/1742-6596/1697/1/012188] [IF:0.55] [SJR:0.21] [Q4]

Study of Latex sphere mask dry etching in oxygen

Morozov I. A., Vyacheslavova K. A., Gudovskikh A. S., Uvarov A. V., Baranov A. I., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12192 , 2020

[DOI:10.1088/1742-6596/1697/1/012192] [IF:0.55] [SJR:0.21] [Q4]

Using MoO x / p -Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon

Kudryashov D. A., Gudovskikh A. S., Maksimova A. A.

Technical Physics Letters, vol. 46(12), pp. 1245—1248 , 2020

[DOI:10.1134/S1063785020120202] [IF:0.87] [SJR:0.338] [Q3]

Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

Кудряшов Д.А., Гудовских А.С., Максимова А.А., Баранов А.И., Уваров А.В., Морозов И.А.

Письма в журнал технической физики, vol. 46(24), pp. 37 , 2020

[DOI:10.21883/PJTF.2020.24.50427.18478] [IF:0.82] [SJR:0.306] [Q3]

#2019

Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Zelentsov Kirill S., Jaffre Alexandre, Le Gall Sylvain, Darga Arouna, Brezard-Oudot Aurore, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 216(10), pp. 1800617 , 2019

[DOI:10.1002/pssa.201800617] [IF:1.86] [SJR:0.527] [Q2]

Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures

Kudryashov Dmitry, Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Kotlyar Konstantin, Lihachev Alexey, Nashchekin Alexei, Pavlov Sergey

AIP Conference Proceedings, vol. 2064(1), pp. 30007 , 2019

[DOI:10.1063/1.5087669] [IF:0.42] [SJR:0.19]

Design and investigation of GaPAsN/Si light-emitting diode

Lazarenko A., Gudovskikh A., Baranov A, Sobolev M, Pirogov E, Nikitina E

Journal of Physics: Conference Series, vol. 1410(1), pp. 12091 , 2019

[DOI:10.1088/1742-6596/1410/1/012091] [IF:0.6] [SJR:0.227] [Q3]

Nanosphere lithography on silicon oxide for high aspect ratio cryo etching of vertically-align silicon structures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12093 , 2019

[DOI:10.1088/1742-6596/1410/1/012093] [IF:0.6] [SJR:0.227] [Q3]

Investigation of ITO magnetron deposition effect on carrier lifetime degradation in silicon wafer

Kudryashov D., Baranov A., Gudovskikh A.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12110 , 2019

[DOI:10.1088/1742-6596/1410/1/012110] [IF:0.6] [SJR:0.227] [Q3]

Investigation of cryogenic dry etching of silicon on I-V curves of Schottky diodes

Maximova A., Gudovskikh A., Kudryashov D.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12111 , 2019

[DOI:10.1088/1742-6596/1410/1/012111] [IF:0.6] [SJR:0.227] [Q3]

Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD

Baranov A. I., Morozov I. A., Uvarov A. V., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12116 , 2019

[DOI:10.1088/1742-6596/1410/1/012116] [IF:0.6] [SJR:0.227] [Q3]

Electronic transport properties of microcrystalline GaP

Uvarov A. V., Gudovskikh A. S., Vasilev A. A.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12207 , 2019

[DOI:10.1088/1742-6596/1410/1/012207] [IF:0.6] [SJR:0.227] [Q3]

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition

Uvarov A. V., Zelentsov K. S., Gudovskikh A. S.

Semiconductors, vol. 53(8), pp. 1075—1081 , 2019

[DOI:10.1134/S1063782619080207] [IF:0.76] [SJR:0.298] [Q3]

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

Gudovskikh A.S., Baranov A., Morozov I, Uvarov A, Kudryashov D A, Kleider J P

None, 2019

#2018

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Nikitina E. V., Bukatin A. A., Zelentsov K. S., Mukhin I. S., Levtchenko A., Le Gall S., Kleider J. P.

Journal of Renewable and Sustainable Energy, vol. 10(2), pp. 21001 , 2018

[DOI:10.1063/1.5000256] [IF:1.81] [SJR:0.483] [Q3]

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitry A., Lazarenko Alexandra A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Pirogov Evgeny V., Sobolev Maxim S., Zelentsov Kirill S., Egorov Anton Yu, Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Journal of Applied Physics, vol. 123(16), pp. 161418 , 2018

[DOI:10.1063/1.5011371] [IF:2.42] [SJR:0.728] [Q2]

Investigation of silicon wafers thermal degradation by photoluminescence decay measurements

Kudryashov Dmitry, Gudovskikh Alexander, Uvarov Alexander, Nikitina Ekaterina

AIP Conference Proceedings, vol. 2012(1), pp. 40005 , 2018

[DOI:10.1063/1.5053513] [IF:0.42] [SJR:0.19]

Current localization in heterostructures of multijunction solar cells: Causes for arising and diagnostics potential

Shvarts Maxim Z., Gudovskikh Alexander S., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Mintairov Mikhail A., Nakhimovich Mariia V., Emelyanov Viktor M.

AIP Conference Proceedings, vol. 2012(1), pp. 40010 , 2018

[DOI:10.1063/1.5053518] [IF:0.42] [SJR:0.19]

Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition

Uvarov A. V., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1038(1), pp. 12108 , 2018

[DOI:10.1088/1742-6596/1038/1/012108] [IF:0.6] [SJR:0.227] [Q3]

Investigation of deposition conditions on the structural properties of µc-Si:H

Uvarov A. V., Gudovskikh A. S., Fedorov V. V.

Journal of Physics: Conference Series, vol. 1124(2), pp. 22009 , 2018

[DOI:10.1088/1742-6596/1124/2/022009] [IF:0.6] [SJR:0.227] [Q3]

Investigation of the effect of chemical pre-treatment on uniformity of the silicon wafer texturing for manufacturing a solar cell

Kudryashov D., Gudovskikh A., Rodin A., Pinaev N.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41010 , 2018

[DOI:10.1088/1742-6596/1124/4/041010] [IF:0.6] [SJR:0.227] [Q3]

All-oxide heterojunction solar cells formed by magnetron sputtering

Kudryashov D., Gudovskikh A., Monastyrenko A.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41017 , 2018

[DOI:10.1088/1742-6596/1124/4/041017] [IF:0.6] [SJR:0.227] [Q3]

Effect of temperature on dry etching of III-V structures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Kotlyar K. P., Shubina K. Y.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41031 , 2018

[DOI:10.1088/1742-6596/1124/4/041031] [IF:0.6] [SJR:0.227] [Q3]

Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

Baranov A. I., Gudovskikh A. S., Kudryashov D. A., Morozov I. A., Mozharov A. M., Zelentsov K. S.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41034 , 2018

[DOI:10.1088/1742-6596/1124/4/041034] [IF:0.6] [SJR:0.227] [Q3]

A novel approach to characterization of bottom sub-cell in multijunction solar cell using photoluminescence.

Zelentsov K. S., Gudovskikh A. S., Kudryashov D. A., Kryzhanovskaya N. V., Kalyuzhnyy N. A., Mintairov S. A.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41039 , 2018

[DOI:10.1088/1742-6596/1124/4/041039] [IF:0.6] [SJR:0.227] [Q3]

Investigating the effect of silicon surface chemical treatment on Al/Si contact properties in GaP/Si solar cells

Kudryashov D., Gudovskikh A.

Journal of Physics: Conference Series, vol. 993(1), pp. 12030 , 2018

[DOI:10.1088/1742-6596/993/1/012030] [IF:0.6] [SJR:0.227] [Q3]

Low temperature plasma enhanced deposition of GaP films on Si substrate

Gudovskikh Alexander S., Morozov Ivan A., Uvarov Alexander V., Kudryashov Dmitriy A., Nikitina Ekaterina V., Bukatin Anton S., Nevedomskiy Vladimir N., Kleider Jean-Paul

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 021302 , 2018

[DOI:10.1116/1.4999409]

Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitriy A., Zelentsov Kirill S., Bukatin Anton S., Kotlyar Konstantin P.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 02D408 , 2018

[DOI:10.1116/1.5018259]

Visualization of Isofrequency Contours of Strongly Localized Waveguide Modes in Planar Dielectric Structures

Permyakov D. V., Sinev I. S., Sychev S. K., Gudovskikh A. S., Bogdanov A. A., Lavrinenko A. V., Samusev A. K.

JETP Letters, vol. 107(1), pp. 10—14 , 2018

[DOI:10.1134/S0021364018010083] [IF:1.49] [SJR:0.583] [Q2]

Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization

Agekyan V. F., Borisov E. V., Gudovskikh A. S., Kudryashov D. A., Monastyrenko A. O., Serov A. Yu, Filosofov N. G.

Semiconductors, vol. 52(3), pp. 383—389 , 2018

[DOI:10.1134/S1063782618030028] [IF:0.76] [SJR:0.298] [Q3]

Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices

Kudryashov D. A., Gudovskikh A. S., Baranov A. I.

Semiconductors, vol. 52(13), pp. 1775—1781 , 2018

[DOI:10.1134/S1063782618130092] [IF:0.76] [SJR:0.298] [Q3]

#2017

Influence of PE-ALD of GaP on the Silicon Wafers Quality

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitriy A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Zelentsov Kirill S., Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 214(12), pp. 1700685 , 2017

[DOI:10.1002/pssa.201700685] [IF:1.86] [SJR:0.527] [Q2]

n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Nikitina Ekaterina V., Kleider Jean Paul

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 14(10), pp. 1700150 , 2017

[DOI:10.1002/pssc.201700150] [IF:0.84] [SJR:0.275] [Q3]

Multijunction a-Si:H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires

Gudovskikh A. S., Morozov I. A., Kudryashov D. A., Nikitina E. V., Sivakov V.

Materials Today: Proceedings, vol. 4(7), pp. 6797—6803 , 2017

[DOI:10.1016/j.matpr.2017.07.006] [IF:1.21] [SJR:0.304]

Fine-Tuning of the Magnetic Fano Resonance in Hybrid Oligomers via fs-Laser-Induced Reshaping

Lepeshov Sergey, Krasnok Alexander, Mukhin Ivan, Zuev Dmitry, Gudovskikh Alexander, Milichko Valentin, Belov Pavel, Miroshnichenko,rey

ACS Photonics, vol. 4(3), pp. 536—543 , 2017

[DOI:10.1021/acsphotonics.6b00727] [IF:7.29] [SJR:2.974] [Q1]

Copper (I) oxide rf-magnetron sputtering at elevated substrate temperatures

Kudryashov D., Monastyrenko A., Mozharov A., Bukatin A., Nikitina E., Pirogov E., Gudovskikh A.

Journal of Physics: Conference Series, vol. 917(3), , 2017

[DOI:10.1088/1742-6596/917/3/032020] [IF:0.6] [SJR:0.227] [Q3]

Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Moiseev E. I., Kryzhanovskaya N. V., Maximov M. V., Mozharov A. M., Gudovskikh A. S., Polushkin A. S., Mukhin I. S., Guseva Yu A., Kulagina M. M., Troshkov S. I., Niemi T., Isoaho R., Guina M., Zhukov A. E.

Journal of Physics: Conference Series, vol. 917(5), pp. 52002 , 2017

[DOI:10.1088/1742-6596/917/5/052002] [IF:0.6] [SJR:0.227] [Q3]

Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer

Uvarov A. V., Gudovskikh A. S., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 917(5), , 2017

[DOI:10.1088/1742-6596/917/5/052004] [IF:0.6] [SJR:0.227] [Q3]

Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Baranov A. I., Gudovskikh A. S., Darga A., Le Gall S., Kleider J. P.

Journal of Physics: Conference Series, vol. 917(5), , 2017

[DOI:10.1088/1742-6596/917/5/052027] [IF:0.6] [SJR:0.227] [Q3]

Influence of dry etching condition to geometry of vertically aligned silicon nanostructures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Kotlyar K. P.

Journal of Physics: Conference Series, vol. 917(5), , 2017

[DOI:10.1088/1742-6596/917/5/052030] [IF:0.6] [SJR:0.227] [Q3]

Experimental demonstration of a reconfigurable magnetic Fano resonance in hybrid oligomers

Lepeshov Sergey I., Zuev Dmitry A., Milichko Valentin A., Belov Pavel A., Krasnok Alexander E., Mukhin Ivan S., Gudovskikh Alexander S., Miroshnichenko,rey E.

Proceedings of the International Conference Days on Diffraction 2017, DD 2017, vol. 2017-December, pp. 210—213 , 2017

[DOI:10.1109/DD.2017.8168025]

Admittance spectroscopy of InGaAsN based solar cells

Baranov A. I., Gudovskikh A. S., Kudryashov D. A., Mozharov A. M., Zelentsov K. S., Kleider J. P.

Journal of Physics: Conference Series, vol. 917(5), pp. 524—528 , 2017

[DOI:10.1134/S1063782615040053] [IF:0.6] [SJR:0.227] [Q3]

Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies

Kudryashov D. A., Gudovskikh A. S., Babichev A. V., Filimonov V., Mozharov A. M., Agekyan V. F., Borisov E. V., Serov A. Yu, Filosofov N. G.

Semiconductors, vol. 51(1), pp. 110—114 , 2017

[DOI:10.1134/S1063782617010110] [IF:0.76] [SJR:0.298] [Q3]

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

Musalinov S. B., Anzulevich A. P., Bychkov I. V., Gudovskikh A. S., Shvarts M. Z.

Semiconductors, vol. 51(1), pp. 88—92 , 2017

[DOI:10.1134/S1063782617010146] [IF:0.76] [SJR:0.298] [Q3]

Characterization of GaP/Si heterojunctions by space charge capacitance measurements

Baranov A., Gudovskikh A.S., Morozov I A, Mozharov A, Nikitina E V, Zelentsov K S, Darga A, Gall S L, Kleider J P

None, 2017

MATERIALS TODAY: PROCEEDINGS

Chelibanov V.P., Polubotko A.M., Gudovskikh, Morozov Ivan, Kudryashov Dmitry, Nikitina, Sivakov V, Mailian, Panosyan, Yengibaryan, Mailian, Nikolskaya, Yabbarov, Zamulaeva, Zhunina, Tereshenko, Mollaev, Faustova, Severin, Drozdov, Vinogradov V, Suvorov, Balandin, Shabu

Synthesis, vol. 6930, pp. 6937 , 2017

#2016

Study of GaP/Si Heterojunction Solar Cells

Gudovskikh A. S., Zelentsov K. S., Baranov A. I., Kudryashov D. A., Morozov I. A., Nikitina E. V., Kleider J. P.

Energy Procedia, vol. 102, pp. 56—63 , 2016

[DOI:10.1016/j.egypro.2016.11.318] [IF:1.77] [SJR:0.545]

Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

Dmitriev P. A., Makarov S. V., Milichko V. A., Mukhin I. S., Gudovskikh A. S., Sitnikova A. A., Samusev A. K., Krasnok A. E., Belov P. A.

Nanoscale, vol. 8(9), pp. 5043—5048 , 2016

[DOI:10.1039/c5nr06742a] [IF:7.02] [SJR:2.18] [Q1]

Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer

Mozharov A. M., Bolshakov A. D., Cirlin G. E., Kudryashov D. A., Gudovskikh A. S., Mukhin I. S., Alferov Zh I.

Journal of Physics: Conference Series, vol. 690(1), pp. 12041 , 2016

[DOI:10.1088/1742-6596/690/1/012041] [IF:0.6] [SJR:0.227] [Q3]

The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering

Kudryashov D., Gudovskikh A., Zelentsov K., Mozharov A., Babichev A., Filimonov A.

Journal of Physics: Conference Series, vol. 741(1), , 2016

[DOI:10.1088/1742-6596/741/1/012013] [IF:0.6] [SJR:0.227] [Q3]

Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

Baranov A. I., Kleider J. P., Gudovskikh A. S., Darga A., Nikitina E. V., Egorov A. Yu

Journal of Physics: Conference Series, vol. 741(1), pp. 12077 , 2016

[DOI:10.1088/1742-6596/741/1/012077] [IF:0.6] [SJR:0.227] [Q3]

Thin film GaP for solar cell application

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Nikitina E. V., Kleider J. P., Myasoedov A. V., Levitskiy V.

Journal of Physics: Conference Series, vol. 741(1), pp. 12088 , 2016

[DOI:10.1088/1742-6596/741/1/012088] [IF:0.6] [SJR:0.227] [Q3]

GaP/Si anisotype heterojunction solar cells

Zelentsov K. S., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 741(1), pp. 12096 , 2016

[DOI:10.1088/1742-6596/741/1/012096] [IF:0.6] [SJR:0.227] [Q3]

Professional training and retraining of specialists in the field of thin film solar power engineering

Afanasjev V. P., Gudovskikh A. S., Pukhova V. M., Terukov E. I., Orekhov D. L.

2015 4th Forum Strategic Partnership of Universities and Enterprises of Hi-Tech Branches (Science. Education. Innovation) pp. 21—23 , 2016

[DOI:10.1109/IVForum.2015.7388240] [SJR:0.104]

GaAs/InGaAsN heterostructures for multi-junction solar cells

Nikitina E. V., Gudovskikh A. S., Lazarenko A. A., Pirogov E. V., Sobolev M. S., Zelentsov K. S., Morozov I. A., Egorov A. Yu

Semiconductors, vol. 50(5), pp. 652—655 , 2016

[DOI:10.1134/S106378261605016X] [IF:0.76] [SJR:0.298] [Q3]

Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

Mozharov A. M., Kudryashov D. A., Bolshakov A. D., Cirlin G. E., Gudovskikh A. S., Mukhin I. S.

Semiconductors, vol. 50(11), pp. 1521—1525 , 2016

[DOI:10.1134/S1063782616110191] [IF:0.76] [SJR:0.298] [Q3]

Etude des proprietes photoelectriques de couches de GaP deposees \`a basse temperature par des mesures de conductivite et de photocourant module

Levtchenko A., Brezard-Oudot A., Alvarez A Jaffre J, Baranov A, Morozov I, Kudryashov D A, Gudovskikh A S, Djebbour S L Gall Z, Kleider J P

None, 2016

Electronic properties of thin GaP layers grown on silicon wafers

Baranov A., Gudovskikh A.S., Morozov I, Mozharov A, Darga A, Kleider J P

None, 2016

Defect study of Ga (In) P (NAs) based solar cells grown on silicon

Baranov A., Gudovskikh A.S., Nikitina E V, Kleider J P, Darga A

None, 2016

ATOMIC LAYER DEPOSITION OF GALLIUM PHOSPHIDE FOR SILICON BASED PHOTOVOLTAICS Conclusion

Gudovskikh A S, Morozov I A, Kudryashov D A, Nikitina E V, Bukatin A S, Kleider J

None pp. 61615 , 2016

Defect characterization of GaP/Si solar cells

Gudovskikh A.S., Zelentsov K.S., Baranov A, Kudryashov D A, Morozov I A, Nikitina E V, Kleider J P

None, 2016

Том. 102. Proceedings of the E-MRS Spring Meeting Symposium T-Advanced Materials and Characterization Techniques for Solar Cells III, 2016.-Сер. Proceedings of the E-MRS Spring \ldots

Kudryashov Dmitry, Morozov Ivan, Baranov Artem, Gudovskikh Alexander, Zelentsov, \»Unal M., Turan R., Tankut A, \cColakoǧlu T, S\»okmen I, Kaminski P M, Isherwood P J M, Womack G, Walls J M, Nikitina E V, Kleider J P, Goffin N, Woolley E, Lisco F, Claudio G, Tyrer J, G\»ull\»u H H, Kuznets, Parlak M, A Zatsepin

None, 2016

#2015

Photoluminescence observation from zinc oxide formed by magnetron sputtering at room temperature

Kudryashov D., Babichev A., Nikitina E., Gudovskikh A., Kladko P.

Journal of Physics: Conference Series, vol. 643(1), pp. 1—4 , 2015

[DOI:10.1088/1742-6596/643/1/012013] [IF:0.6] [SJR:0.227] [Q3]

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Talkenberg Florian, Illhardt Stefan, Radnoczi Gy\»orgy Zoltan, Pecz Bela, Schmidl Gabriele, Schleusener Alexander, Dikhanbayev Kadyrjan, Mussabek Gauhar, Gudovskikh Alexander, Sivakov Vladimir

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33(4), pp. 041101 , 2015

[DOI:10.1116/1.4921726]

MBE growth of GaP on a Si substrate

Sobolev M. S., Lazarenko A. A., Nikitina E. V., Pirogov E. V., Gudovskikh A. S., Egorov A. Yu

Semiconductors, vol. 49(4), pp. 559—562 , 2015

[DOI:10.1134/S1063782615040235] [IF:0.76] [SJR:0.298] [Q3]

Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

Bolshakov A. S., Chaldyshev V. V., Babichev A. V., Kudryashov D. A., Gudovskikh A. S., Morozov I. A., Sobolev M. S., Nikitina E. V.

Semiconductors, vol. 49(11), pp. 1400—1404 , 2015

[DOI:10.1134/S1063782615110044] [IF:0.76] [SJR:0.298] [Q3]

Electrical and optical properties of nanosized films of doped zinc and indium oxides deposited by RF magnetron sputtering at room temperature

Sosnin D. V., Kudryashov D. A., Gudovskikh S. A., Zelentsov K. S.

Technical Physics Letters, vol. 41(8), pp. 804—806 , 2015

[DOI:10.1134/S1063785015080325] [IF:1.01] [SJR:0.446] [Q2]

Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

Kudryashov D. A., Gudovskikh A. S., Mozharov A. M., Bol’shakov A. D., Mukhin I. S., Alferov Zh I.

Technical Physics Letters, vol. 41(12), pp. 1120—1123 , 2015

[DOI:10.1134/S106378501512007X] [IF:1.01] [SJR:0.446] [Q2]

a-Si:H/c-Si heterojunction solar cell based on top-down silicon nanostructures

Morozov I. A., Gudovskikh A. S., Kudryashov D. A., Nikitina E. V., Talkenberg F., Schleusener A., Bochmann A., Sivakov V.

Journal of Nanoelectronics and Optoelectronics, vol. 9(6), pp. 723—727 , 2015

[DOI:10.1166/jno.2014.1669] [IF:0.74] [SJR:0.171] [Q3]

Admittance spectroscopy of Ga (In) P (NAs) based solar cells grown on silicon

Baranov A., Gudovskikh A.S., Nikitina E V, Kleider J P, Darga A

None, 2015

#2014

Interfaces in III–v high efficiency solar cells

Gudovskikh Alexander S., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Lantratov Vladimir M.

Springer Series in Materials Science, vol. 190, pp. 545—570 , 2014

[DOI:10.1007/978-3-319-01988-8_18] [IF:2.42] [SJR:0.344] [Q3]

High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

Shvarts Maxim Z., Gudovskikh Alexander S., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Soluyanov,rei A., Timoshina Nailya Kh, Luque Antonio

AIP Conference Proceedings, vol. 1616(1), pp. 29—32 , 2014

[DOI:10.1063/1.4897021] [IF:0.42] [SJR:0.19]

Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate

Kudryashov D. A., Gudovskikh A. S.

Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD pp. 171—172 , 2014

[DOI:10.1109/NUSOD.2014.6935411] [IF:0.27] [SJR:0.142]

Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation

Kudryashov D. A., Gudovskikh A. S., Nikitina E. V., Egorov A. Yu

Semiconductors, vol. 48(3), pp. 381—386 , 2014

[DOI:10.1134/S1063782614030154] [IF:0.76] [SJR:0.298] [Q3]

Study of GaInP solar-cell interfaces by variable-flux spectral measurements

Morozov I. A., Gudovskikh A. S.

Semiconductors, vol. 48(4), pp. 459—464 , 2014

[DOI:10.1134/S1063782614040216] [IF:0.76] [SJR:0.298] [Q3]

Temperature and bias dependence of hydrogenated amorphous silicon-crystalline silicon heterojunction capacitance: The link to band bending and band offsets1

Maslova O., Brezard-Oudot A., Gueunier-Farret M. E., Alvarez J., Favre W., Mu\~noz D., Gudovskikh A. S., Kleider J. P.

Canadian Journal of Physics, vol. 92(7-8), pp. 690—695 , 2014

[DOI:10.1139/cjp-2013-0544] [IF:1.05] [SJR:0.26] [Q3]

Characterization of the manufacturing processes to grow triple-junction solar cells

Kalyuzhnyy N. A., Evstropov V. V., Lantratov V. M., Mintairov S. A., Mintairov M. A., Gudovskikh A. S., Luque A.,,reev V. M.

International Journal of Photoenergy, vol. 2014, , 2014

[DOI:10.1155/2014/836284] [IF:2.04] [SJR:0.376] [Q2]

a-Si: H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer

Gudovskikh A., Nikitina E.V., Kleider J P

None, 2014

#2013

Low temperature growth of ITO transparent conductive oxide layers in oxygen-free environment by RF magnetron sputtering

Kudryashov D., Gudovskikh A., Zelentsov K.

Journal of Physics: Conference Series, vol. 461(1), pp. 12021 , 2013

[DOI:10.1088/1742-6596/461/1/012021] [IF:0.6] [SJR:0.227] [Q3]

Study of the light-induced degradation of tandem $\alpha$-Si:H/$\mu$c-Si:H photovoltaic converters

Emelyanov V. M., Abramov A. S., Bobyl A. V., Gudovskikh A. S., Orekhov D. L., Terukov E. I., Timoshina N. Kh, Chosta O. I., Shvarts M. Z.

Semiconductors, vol. 47(5), pp. 679—685 , 2013

[DOI:10.1134/S1063782613050102] [IF:0.76] [SJR:0.298] [Q3]

Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy

Gudovskikh A. S., Abramov A. S., Bobyl A. V., Verbitskiy V. N., Zelentsov K. S., Ershenko E. M., Kudryashov D. A., Kudryashov S. A., Monastyrenko A. O., Terra A. R., Terukov E. I.

Semiconductors, vol. 47(8), pp. 1090—1096 , 2013

[DOI:10.1134/S106378261308006X] [IF:0.76] [SJR:0.298] [Q3]

Analysis of light-induced degradation mechanisms in $\alpha$-Si:H/$\mu$c-Si:H solar photovoltaics

Emelyanov V. M., Abramov A. S., Bobyl A. V., Verbitsky V. N., Gudovskikh A. S., Ershenko E. M., Kudryashov S. A., Terukov E. I., Chosta O. I., Shvarts M. Z.

Semiconductors, vol. 47(9), pp. 1252—1257 , 2013

[DOI:10.1134/S1063782613090066] [IF:0.76] [SJR:0.298] [Q3]

Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

Baranov A. I., Gudovskikh A. S., Nikitina E. V., Egorov A. Yu

Technical Physics Letters, vol. 39(12), pp. 1117—1120 , 2013

[DOI:10.1134/S1063785013120171] [IF:1.01] [SJR:0.446] [Q2]

Capacitance spectroscopy of hydrogenated amorphous silicon/crystalline silicon heterojunctions: analytical calculations and experiment

Maslova O., Brezard-Oudot A., Favre W, Munoz D, Gueunier-Farret M E, Alvarez J, Gudovskikh A S, Terukov E I, Kleider J P

None pp. nc , 2013

Characterization of the III-V/Ge interface by capacitance measurements for III-V multijunction solar cells development

Zelentsov K.S., Gudovskikh A.S., Kalyuzhnyy N A, Lantratov V M, Mintairov S A, Alvarez J, Kleider J P

None, 2013

#2012

Modeling of capacitance spectroscopy of (p) a-Si: H/(n) c-Si interfaces

Maslova Olga, Brezard-Oudot Aurore, Favre Wilfried, Alvarez Jose, Gudovskikh Alexander, Terukov Eugene, Kleider Jean Paul

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9(6), pp. 1481—1483 , 2012

[DOI:10.1002/pssc.201100761] [IF:0.84] [SJR:0.275] [Q3]

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

Maslova O. A., Gueunier-Farret M. E., Alvarez J., Gudovskikh A. S., Terukov E. I., Kleider J. P.

Journal of Non-Crystalline Solids, vol. 358(17), pp. 2007—2010 , 2012

[DOI:10.1016/j.jnoncrysol.2012.01.053] [IF:3.14] [SJR:0.712] [Q1]

Interface properties of GaInP/Ge hetero-structure sub-cells of multi-junction solar cells

Gudovskikh A. S., Zelentsov K. S., Kalyuzhnyy N. A., Evstropov V. V., Lantratov V. M., Mintairov S. A.

Journal of Physics D: Applied Physics, vol. 45(49), pp. 495305 , 2012

[DOI:10.1088/0022-3727/45/49/495305] [IF:3.33] [SJR:0.899] [Q1]

Indium tin oxide films grown at room temperature by RF-magnetron sputtering in oxygen-free environment

Kudryashov D., Gudovskikh A., Zelentsov K.

International Conference on Oxide Materials for Electronic Engineering, OMEE 2012 pp. 61—62 , 2012

[DOI:10.1109/OMEE.2012.6464842]

Caracterisation de l’interface (p) a-Si: H/(n) c-Si par spectroscopie de capacite: modelisation et resultats experimentaux

Maslova O., Brezard-Oudot A., Favre W, Alvarez J, Gudovskikh A S, Terukov E I, Kleider J P

None, 2012

Electrical characterization and modeling of the amorphous/crystalline silicon interface

Kleider J.P., Varache R., Favre W, Maslova O, Alvarez J, Gudovskikh A S, Gueunier-Farret M E

None, 2012

#2011

Characterization of GaInP/Ge heterostructure solar cells by capacitance measurements at forward bias under illumination

Gudovskikh A. S., Zelentsov K. S., Kalyuzhnyy N. A., Lantratov V. M., Mintairov S. A., Kleider J. P.

Energy Procedia, vol. 3, pp. 76—83 , 2011

[DOI:10.1016/j.egypro.2011.01.013] [IF:1.77] [SJR:0.545]

Characterization of silicon heterojunctions for solar cells

Kleider Jean Paul, Alvarez Jose, Ankudinov Alexander Vitalievitch, Gudovskikh Alexander Sergeevitch, Gushchina Ekaterina Vladimirovna, Labrune Martin, Maslova Olga Alexandrovna, Favre Wilfried, Gueunier-Farret Marie Estelle, Rocai Cabarrocas Pere, Terukov Eugene Ivanovitch

Nanoscale Research Letters, vol. 6(1), pp. 152 , 2011

[DOI:10.1186/1556-276X-6-152] [IF:3.75] [SJR:0.792] [Q2]

Interfaces in III-V multijunction solar cells: characterization and modelling

Gudovskikh, Zelentsov, Kalyuzhnyy N A, Lantratov V M, Mintairov S A, Kleider J P

None, 2011

Characterization of the a-Si: H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments

Maslova O., Brezard A., Favre W, Alvarez J, Gudovskikh A S, Terukov E I, Kleider J P

None, 2011

#2010

Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

Favre W., Labrune M., Dadouche F., Gudovskikh A. S., Roca I Cabarrocas P., Kleider J. P.

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7(3-4), pp. 1037—1040 , 2010

[DOI:10.1002/pssc.200982800] [IF:0.84] [SJR:0.275] [Q3]

Band structure at heterojunction interfaces of GaInP solar cells

Gudovskikh A. S., Kleider J. P., Kalyuzhnyy N. A., Lantratov V. M., Mintairov S. A.

Solar Energy Materials and Solar Cells, vol. 94(11), pp. 1953—1958 , 2010

[DOI:10.1016/j.solmat.2010.06.027] [IF:7.52] [SJR:1.827] [Q1]

Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

Maslova O. A., Alvarez J., Gushina E. V., Favre W., Gueunier-Farret M. E., Gudovskikh A. S., Ankudinov A. V., Terukov E. I., Kleider J. P.

Applied Physics Letters, vol. 97(25), pp. 252110 , 2010

[DOI:10.1063/1.3525166] [IF:3.81] [SJR:1.343] [Q1]

Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

Kalyuzhnyy N. A., Gudovskikh A. S., Evstropov V. V., Lantratov V. M., Mintairov S. A., Timoshina N. Kh, Shvarts M. Z.,,reev V. M.

Semiconductors, vol. 44(11), pp. 1520—1528 , 2010

[DOI:10.1134/S106378261011028X] [IF:0.76] [SJR:0.298] [Q3]

ANISOTYPE GaAs BASED HETEROJUNCTIONS FOR III-V MULTIJUNCTION SOLAR CELLS

Gudovskikh AS, Zelentsov KS, Kalyuzhnyy NA

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain pp. 472 — 476 , 2010

Current Flow and Efficiency of Ge Pn Junctions in Triple-Junction Gainp/Ga (in) As/Ge Solar Cells for Space Applications.

Kalyuzhnyy NA, Gudovskikh AS

Pvlab.Ioffe.Ru pp. 1—7 , 2010

#2009

Electronic and structural properties of the amorphous/crystalline silicon interface

Kleider J. P., Chouffot R., Gudovskikh A. S., Roca i Cabarrocas P., Labrune M., Ribeyron P. J., Br\»uggemann R.

Thin Solid Films, vol. 517(23), pp. 6386—6391 , 2009

[DOI:10.1016/j.tsf.2009.02.092] [IF:1.99] [SJR:0.513] [Q2]

III-phosphides heterojunction solar cell interface properties from admittance spectroscopy

Gudovskikh A. S., Kleider J. P., Chouffot R., Kalyuzhnyy N. A., Mintairov S. A., Lantratov V. M.

Journal of Physics D: Applied Physics, vol. 42(16), pp. 165307 , 2009

[DOI:10.1088/0022-3727/42/16/165307] [IF:3.33] [SJR:0.899] [Q1]

Properties of interfaces in GaInP solar cells

Gudovskikh A. S., Kalyuzhnyy N. A., Lantratov V. M., Mintairov S. A., Shvarts M. Z.,,reev V. M.

Semiconductors, vol. 43(10), pp. 1363—1368 , 2009

[DOI:10.1134/S1063782609100194] [IF:0.76] [SJR:0.298] [Q3]

#2008

Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells

Chouffot R., Ibrahim S., Br\»uggemann R., Gudovskikh A. S., Kleider J. P., Scherff M., Fahrner W. R., Cabarrocas P. Roca i., Eon D., Ribeyron P. J.

Journal of Non-Crystalline Solids, vol. 354(19-25), pp. 2416—2420 , 2008

[DOI:10.1016/j.jnoncrysol.2007.09.032] [IF:3.14] [SJR:0.712] [Q1]

High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions

Kleider J. P., Soro Y. M., Chouffot R., Gudovskikh A. S., Roca i Cabarrocas P., Damon-Lacoste J., Eon D., Ribeyron P. J.

Journal of Non-Crystalline Solids, vol. 354(19-25), pp. 2641—2645 , 2008

[DOI:10.1016/j.jnoncrysol.2007.09.087] [IF:3.14] [SJR:0.712] [Q1]

Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices

Godet C., Kleider J. P., Gudovskikh A. S.

Journal of Non-Crystalline Solids, vol. 354(19-25), pp. 2637—2640 , 2008

[DOI:10.1016/j.jnoncrysol.2007.09.113] [IF:3.14] [SJR:0.712] [Q1]

Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows

Gudovskikh A. S., Kaluzhniy N. A., Lantratov V. M., Mintairov S. A., Shvarts M. Z.,,reev V. M.

Thin Solid Films, vol. 516(20), pp. 6739—6743 , 2008

[DOI:10.1016/j.tsf.2007.12.016] [IF:1.99] [SJR:0.513] [Q2]

New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

Gudovskikh A. S., Chouffot R., Kleider J. P., Kaluzhniy N. A., Lantratov V. M., Mintairov S. A., Damon-Lacoste J., Eon D., Roca i Cabarrocas P., Ribeyron P. J.

Thin Solid Films, vol. 516(20), pp. 6786—6790 , 2008

[DOI:10.1016/j.tsf.2007.12.021] [IF:1.99] [SJR:0.513] [Q2]

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

Kleider J. P., Gudovskikh A. S., Roca I Cabarrocas P.

Applied Physics Letters, vol. 92(16), pp. 162101 , 2008

[DOI:10.1063/1.2907695] [IF:3.81] [SJR:1.343] [Q1]

Characterization of amorphous/crystalline silicon interfaces from electrical measurements

Kleider J. P., Gudovskikh A. S.

Materials Research Society Symposium Proceedings, vol. 1066, pp. 75—86 , 2008

[DOI:10.1557/proc-1066-a04-01]

About the efficiency limits in HIT structures

Cabarrocas J., P.R.I. Damon-Lacoste, Gudovskikh A, Ribeyron, Kleider J P, Veschetti Y, Muller J C

None, 2008

(n) a-Si: H/pm-Si: H/p-Si heterojunction solar cells: fabrication, properties and perspectives

Gudovskikh A., Kleider J.P., Damon-Lacoste J, Cabarrocas, Veschetti Y, Muller J C, Ribeyron P J, Rolland E

None, 2008

Caracterisation d’interface de heterojonctions a-Si: H/c-Si par spectroscopie de capacite sous polarisation directe

Gudovskikh A., Kleider J.P., Damon-Lacoste J, Cabarrocas, Veschetti Y, Ribeyron P J

None, 2008

Study of GaInP Heterojunction Solar Cell Interface Properties by Admittance Spectroscopy

Gudovskikh A S, Kleider J P, Chouffot R, Kalyuzhnyy N A, Lantratov V M, Mintairov S A

23rd European Photovoltaic Solar Energy Conference and Exhibition pp. 358 , 2008

#2007

Scaling analysis of field‐enhanced bandtail hopping transport in amorphous carbon nitride

Godet C., Kleider J. P., Gudovskikh A. S.

physica status solidi (b), vol. 16(6), pp. 2081-2099 , 2007

[DOI:10.1002/pssb.200642043]

Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

Gudovskikh A. S., Ibrahim S., Kleider J. P., Damon-Lacoste J., Roca i Cabarrocas P., Veschetti Y., Ribeyron P. J.

Thin Solid Films, vol. 515(19 SPEC. ISS.), pp. 7481—7485 , 2007

[DOI:10.1016/j.tsf.2006.11.198] [IF:1.99] [SJR:0.513] [Q2]

Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination

Gudovskikh A. S., Kleider J. P.

Applied Physics Letters, vol. 90(3), pp. 34104 , 2007

[DOI:10.1063/1.2431783] [IF:3.81] [SJR:1.343] [Q1]

Caracterisation par spectroscopie d’admittance de cellules photovolta\»iques \`a heterojonction a-Si: H/c-Si

Gudovskikh A., Kleider J.P., Ibrahim S

None, 2007

#2006

Frequency scaling of ac hopping transport in amorphous carbon nitride

Godet C., Kleider J. P., Gudovskikh A. S.

Diamond and Related Materials, vol. 16(10), pp. 1799—1805 , 2006

[DOI:10.1016/j.diamond.2007.07.017] [IF:3.03] [SJR:0.589] [Q2]

About the efficiency limits of heterojunction solar cells

Damon-Lacoste J., Roca i Cabarrocas P., Chatterjee P., Veschetti Y., Gudovskikh A. S., Kleider J. P., Ribeyron P. J.

Journal of Non-Crystalline Solids, vol. 352(9-20 SPEC. ISS.), pp. 1928—1932 , 2006

[DOI:10.1016/j.jnoncrysol.2005.10.061] [IF:3.14] [SJR:0.712] [Q1]

New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions

Gudovskikh A. S., Kleider J. P., Stangl R.

Journal of Non-Crystalline Solids, vol. 352(9-20 SPEC. ISS.), pp. 1213—1216 , 2006

[DOI:10.1016/j.jnoncrysol.2005.11.100] [IF:3.14] [SJR:0.712] [Q1]

DC and AC Hopping transport in metal/amorphous carbon nitride/metal devices

Kleider J. P., Gudovskikh A. S., Godet C.

Journal of Non-Crystalline Solids, vol. 352(9-20 SPEC. ISS.), pp. 1323—1326 , 2006

[DOI:10.1016/j.jnoncrysol.2005.12.019] [IF:3.14] [SJR:0.712] [Q1]

Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

Gudovskikh A. S., Kleider J. P., Damon-Lacoste J., Roca i Cabarrocas P., Veschetti Y., Muller J. C., Ribeyron P. J., Rolland E.

Thin Solid Films, vol. 511-512, pp. 385—389 , 2006

[DOI:10.1016/j.tsf.2005.12.111] [IF:1.99] [SJR:0.513] [Q2]

Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

Veschetti Y., Muller J. C., Damon-Lacoste J., Roca i Cabarrocas P., Gudovskikh A. S., Kleider J. P., Ribeyron P. J., Rolland E.

Thin Solid Films, vol. 511-512, pp. 543—547 , 2006

[DOI:10.1016/j.tsf.2005.12.166] [IF:1.99] [SJR:0.513] [Q2]

#2005

Improvement of polymorphous/crystalline heterojunction solar cells using low temperature screen-printed pastes

Veschetti Y., Muller J. C., Damon-Lacoste J., Roca i Cabarrocas P., Gudovskikh A. S., Kleider J. P., Ribeyron P. J., Rolland E.

Conference Record of the IEEE Photovoltaic Specialists Conference pp. 1131—1134 , 2005

[DOI:10.1109/pvsc.2005.1488335] [SJR:0.241]

Characterization of an a-Si:H/c-Si interface by admittance spectroscopy

Gudovskikh A. S., Kleider J. P., Terukov E. I.

Fizika i Tekhnika Poluprovodnikov, vol. 39(8), pp. 940—944 , 2005

[DOI:10.1134/1.2010683]

Polymorphous/Crystalline Heterojunction Solar Cells with Low Cost Industrial Process on P Type Monocrystalline Silicon

Ribeyron P-J, Veschetti Y, Muller J C, Damon-Lacoste J, Roca i Cabarrocas P, Gudovskikh A S, Kleider J-P

20th European Photovoltaic Solar Energy Conference and Exhibition pp. 1044 , 2005

Heterojonctions c-Si/a-Si: H pour fabrication basse temperature

Damon-Lacoste J., Cabarrocas P.R.I., Ribeyron P J, Rolland E, Kleider J P, Gudovskikh A S, Veschetti Y

None, 2005

#2004

Investigation of nc-Si inclusions in multilayer a-Si:H films obtained using the layer by layer technique

Gudovskikh A. S., Kleider J. P., Afanasjev V. P., Kazak-Kazakevich A. Z., Sazanov A. P.

Journal of Non-Crystalline Solids, vol. 338-340(1 SPEC. ISS.), pp. 135—138 , 2004

[DOI:10.1016/j.jnoncrysol.2004.02.038] [IF:3.14] [SJR:0.712] [Q1]

Electroluminescence from amorphous-crystalline silicon heterostructures

Bresler M. S., Gusev O. B., Terukov E. I., Fuhs W., Froitzheim A., Gudovskikh A. S., Kleider J. P., Weiser G.

Journal of Non-Crystalline Solids, vol. 338-340(1 SPEC. ISS.), pp. 440—443 , 2004

[DOI:10.1016/j.jnoncrysol.2004.03.014] [IF:3.14] [SJR:0.712] [Q1]

Polycrystalline AlN films deposited at low temperature for selective UV detectors

Gudovskikh Alexander S., Alvarz Jose, Kleider Jean Paul, Afanasjev Valentin P., Luchinin Victor V., Sazanov Alexander P., Terukov Evgenii I.

Sensors and Actuators, A: Physical, vol. 113(3), pp. 355—359 , 2004

[DOI:10.1016/j.sna.2004.02.017] [IF:3.41] [SJR:0.712] [Q1]

Investigation of a-Si:H/c-Si heterojunction solar cells interface properties

Gudovskikh A. S., Kleider J. P., Froitzheim A., Fuhs W., Terukov E. I.

Thin Solid Films, vol. 451-452, pp. 345—349 , 2004

[DOI:10.1016/j.tsf.2003.10.127] [IF:1.99] [SJR:0.513] [Q2]

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Afanasiev V. P., Gudovskikh A. S., Kazak-Kazakevich A. Z., Sazanov A. P., Trapeznikova I. N., Terukov E. I.

Semiconductors, vol. 38(2), pp. 221—224 , 2004

[DOI:10.1134/1.1648381] [IF:0.76] [SJR:0.298] [Q3]

Realisation de cellules \`a heterojonctions c-Si/a-Si: H \`a haut rendement

Damon-Lacoste J., Cabarrocas P.R.I., Ribeyron P J, Kleider J P, Gudovskikh A S, Veschetti Y

None, 2004

Interface properties of a-Si: H/c-Si heterojunctions investigated by admittance spectroscopy

Gudovskikh A.S., Kleider JP, Stangl R., Schmidt M., Fuhs W.

Proc. 19th PVSEC, Paris, France, vol. 697, pp. 11—14 , 2004

Plasma treatments of the interface in n-type amorphous hydrogenated silicon/p-type crystalline silicon heterojunction solar cells

Damon-Lacoste J., Cabarrocas Pere Roca I, Gudovskikh A.S., Kleider J.-P., Ribeyron P. J., Svrcek V., Veschetti Y.

Proceedings 19th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Paris, France, 2014, Vol. 2 cells pp. 1453—1456 , 2004

#2002

Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties

Afanasjev V. P., Gudovskikh A. S., Kleider J. P., Koughia K. V., Sazanov A. P., Gueunier M. E., Terukov E. I.

Journal of Non-Crystalline Solids, vol. 299-302(PART 2), pp. 1070—1074 , 2002

[DOI:10.1016/S0022-3093(01)01073-0] [IF:3.14] [SJR:0.712] [Q1]

Projet SiNERGIES, T 4.3: heterojonctions c-Si/a-Si: H pour fabrication basse temperature

Damon-Lacoste J., Cabarrocas P.R.I., Ribeyron P J, Rolland E, Gudovskikh A, Kleider J P, Veschetti Y

None, 2002

#2001

Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing

Kurova I. A., Ormont N. N., Terukov E. I., Trapeznikova I. N., Afanas’ev V. P., Gudovskikh A. S.

Semiconductors, vol. 35(3), pp. 353—356 , 2001

[DOI:10.1134/1.1356161] [IF:0.76] [SJR:0.298] [Q3]

Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition

Afanas’ev V. P., Gudovskikh A. S., Nevedomskii V. N., Sazanov A. P., Sitnikova A. A., Trapeznikova I. N., Terukov E. I.

Semiconductors, vol. 36(2), pp. 230—234 , 2001

[DOI:10.1134/1.1453445] [IF:0.76] [SJR:0.298] [Q3]

#2000

AIN thin films formed by time modulated low temperature reactive magnetron sputtering and their properties

Afanasjev Alentin Petrovich, Gudovskikh Alexander Sergeevich, Luchinin Victor Victorovich, Sazanov Alexander Petrovich, Terukov Evgenyi Ivanovich, Schwarz Reinhard

Journal of Wide Bandgap Materials, vol. 8(2), pp. 105—114 , 2000

[DOI:10.1106/PLNX-Q35M-D8YC-J1DL]

Structure and properties of a-Si:H films grown by cyclic deposition

Afanas’ev V. P., Gudovskikh A. S., Kon’kov O. I., Kazanin M. M., Kougiya K. V., Sazanov A. P., Trapeznikova I. N., Terukov E. I.

Semiconductors, vol. 34(4), pp. 477—480 , 2000

[DOI:10.1134/1.1188010] [IF:0.76] [SJR:0.298] [Q3]

Photodetector structures based on amorphous hydrogenated silicon with nanocrystalline inclusions

Afanas’ev V. P., Gudovskikh A. S., Sazanov A. P., Selyuzhenok N. A., Terukov E. I.

Journal of Optical Technology, vol. 68(12), pp. 949 , 2000

[DOI:10.1364/jot.68.000949]