Баранов А.И. — Лаборатория возобновляемых источников энергии

Баранов Артем Игоревич

+7 (812) 448-69-80 доб (5069)
baranov_art@spbau.ru

CV

Образование

06.2018	Защита степени PhD во Франции в University Paris-Saclay, тема диссертации: «Multi-junction solar cells from monolithic integration of dilute nitrides on GaAs and Si wafers: defect studies».
09.2013–08.2017	Академический Университет, *аспирант, научный руководитель – А. С. Гудовских*
09.2011–06.2013	Академический Университет, *магистр* по направлению «электроника и микроэлектроника», научный руководитель – А. С. Гудовских, тема диссертации: «Исследование солнечных элементов на основе четверного раствора GaNAsP, согласованного по параметру решетки с кремнием».
09.2007-06.2011	Санкт-Петербургский Государственный Политехнический Университет, физико-технический факультет, *бакалавр* по направлению «техническая физика».

Дополнительное образование

2015-2016

Курсы французского языка во Французском институте Санкт-Петербурга

Научная деятельность

2012 – наст. время

Федеральное государственное бюджетное учреждение высшего профессионального образования и науки Санкт-Петербургский Академический Университет — научно образовательный центр нанотехнологий Российской академии наук (Академический Университет),

до 2015 года — лаборант,

с 2015 года – младший научный сотрудник,

лаборатория возобновляемых источников энергии,

Профессиональная область: исследование фотоэлектрических и электрофизических свойств и моделирование солнечных элементов; изучение дефектных уровней в новых материалах и различных интерфейсов.

2014 – 2018

Периодическая работа в лаборатории GeePs университета Paris-Saclay в городе Париж, Франция со стипендией Французского Правительства для аспирантов для написания кандидатской диссертации под совместным российско-французским руководством.

Область научных интересов

Солнечные элементы, гетероструктуры, исследование дефектных уровней в III-V полупроводниках, разбавленные нитриды.

Увлечения

Спорт и путешествия.

Публикации

Последнее обновление: 16.10.2022
Всего публикаций: 90

#2022

Low-Temperature Plasma Deposition of III–V Compounds on Silicon for Multijunction Solar Cells

Gudovskikh Alexander S., Kudryashov Dmitri A., Baranov Artem I., Uvarov Alexander V., Morozov Ivan A., Monastyrenko Anatoliy O., Maksimova Alina A., Nashchekin Alexey V., Vyacheslavova Ekaterina A., Nevedomskiy Vladimir N.

ACS Applied Energy Materials, vol. 5(5), pp. 5356-5366 , 2022

[DOI:10.1021/acsaem.1c02691] [IF:4.54] [SJR:1.495] [Q1]

Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon

Maksimova Alina A., Uvarov Alexander V., Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitri A., Vyacheslavova Ekaterina A., Morozov Ivan A., Le Gall Sylvain, Kleider Jean-Paul

ACS Applied Energy Materials, vol. 5(5), pp. 5367-5373 , 2022

[DOI:10.1021/acsaem.1c02704] [IF:4.54] [SJR:1.495] [Q1]

Lanthanide(III)-Incorporating Polysiloxanes as Materials for Light-Emitting Devices

Miroshnichenko Anna S., Deriabin Konstantin V., Baranov Artem I., Neplokh Vladimir, Mitin Dmitry M., Kolesnikov Ilya E., Dobrynin Mikhail V., Parshina Elizaveta K., Mukhin Ivan S., Islamova Regina M.

ACS Applied Polymer Materials, vol. 4(4), pp. 2683-2690 , 2022

[DOI:10.1021/acsapm.2c00017]

Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives

Vyacheslavova Ekaterina A., Morozov Ivan A., Kudryashov Dmitri A., Uvarov Alexander V., Baranov Artem I., Maksimova Alina A., Abolmasov Sergey N., Gudovskikh Alexander S.

ACS Omega, vol. 7(7), pp. 6053-6057 , 2022

[DOI:10.1021/acsomega.1c06435] [IF:3.01] [SJR:0.767] [Q1]

#2021

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Gudovskikh Alexander, Kudryashov Dmitry, Baranov Artem, Uvarov Alexander, Morozov Ivan, Maksimova Alina, Vyacheslavova Ekaterina, Kirilenko Demid, Mozharov Alexey

Physica Status Solidi (A) Applications and Materials Science, vol. 218(22), pp. 2170061 , 2021

[DOI:10.1002/pssa.202170061] [IF:1.86] [SJR:0.527] [Q2]

Plasma-Deposited Multilayer GaP/Si p-i-n Structure for Tandem Silicon-Based Solar Cells

Uvarov Alexander V., Gudovskikh Alexander S., Baranov Artem I., Maksimova Alina A., Kudryashov Dmitriy A., Vyacheslavova Ekaterina A., Yakovlev George E., Zubkov Vasily I.

ACS Applied Energy Materials, vol. 5(5), pp. 5374-5380 , 2021

[DOI:10.1021/acsaem.1c02707] [IF:4.54] [SJR:1.495] [Q1]

Conformality of a-Si:H deposited by low temperature PECVD for solar cells application

Uvarov A V, Baranov A I, Morozov I A, Kudryashov D A, Maksimova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012041 , 2021

[DOI:10.1088/1742-6596/2086/1/012041] [IF:0.6] [SJR:0.227] [Q3]

The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching

Baranov A I, Kudyashov D A, Morozov I A, Shugurov K Yu, Uvarov A V, Maximova A A, Vyacheslavova E A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2086(1), pp. 012078 , 2021

[DOI:10.1088/1742-6596/2086/1/012078] [IF:0.6] [SJR:0.227] [Q3]

Study of GaP/Si electron-selective contact deposited by plasma

Maksimova A A, Baranov A I, Uvarov A V, Gudovskikh A S, Kudryashov D A, Morozov I A, Bogdanova M V

Journal of Physics: Conference Series, vol. 2086(1), pp. 012091 , 2021

[DOI:10.1088/1742-6596/2086/1/012091] [IF:0.6] [SJR:0.227] [Q3]

Investigation of defects in structures based on BP/Si heterojunction

Maksimova A A, Baranov A I, Uvarov A V, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2103(1), pp. 012088 , 2021

[DOI:10.1088/1742-6596/2103/1/012088] [IF:0.6] [SJR:0.227] [Q3]

Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature

Uvarov A V, Morozov I A, Baranov A I, Maximova A A, Vyacheslavova E A, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 2103(1), pp. 012122 , 2021

[DOI:10.1088/1742-6596/2103/1/012122] [IF:0.6] [SJR:0.227] [Q3]

Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films

Kudriashov D. A., Maksimova A. A., Vyacheslavova E. A., Uvarov A. V., Morozov I. A., Baranov A. I., Monastyrenko A. O., Gudovskikh A. S.

Semiconductors, vol. 55(4), pp. 410-414 , 2021

[DOI:10.1134/s1063782621040072] [IF:0.76] [SJR:0.298] [Q3]

Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD

Uvarov A. V., Baranov A. I., Vyacheslavova E. A., Kalyuzhnyi N. A., Kudryashov D. A., Maksimova A. A., Morozov I. A., Mintairov S. A., Salii R. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(10), pp. 730-733 , 2021

[DOI:10.1134/s1063785021070270] [IF:1.01] [SJR:0.446] [Q2]

Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction

Baranov A. I., Kudryashov D. A., Uvarov A. V., Morozov I. A., Maksimova A. A., Vyacheslavova E. A., Gudovskikh A. S.

Technical Physics Letters, vol. 47(11), pp. 785-788 , 2021

[DOI:10.1134/s1063785021080162] [IF:1.01] [SJR:0.446] [Q2]

Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

Кудряшов Д.А., Максимова А.А., Вячеславова Е.А., Уваров А.В., Морозов И.А., Баранов А.И., Монастыренко А.О., Гудовских А.С.

Физика и техника полупроводников, vol. 55(4), pp. 360 , 2021

[DOI:10.21883/FTP.2021.04.50741.9561]

Формирование гетероструктур GaP/Si-фотопреобразователей с помощью комбинации методов МОС-гидридной эпитаксии и атомно-слоевого плазмохимического осаждения

Уваров А.В., Баранов А.И., Вячеславова Е.А., Калюжный Н.А., Кудряшов Д.А., Максимова А.А., Морозов И.А., Минтаиров С.А., Салий Р.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(14), pp. 51 , 2021

[DOI:10.21883/PJTF.2021.14.51189.18781] [IF:0.82] [SJR:0.306] [Q3]

Исследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(16), pp. 24 , 2021

[DOI:10.21883/PJTF.2021.16.51324.18779] [IF:0.82] [SJR:0.306] [Q3]

Исследование диодов Шоттки на основе массива кремниевых волокон, полученных сухим криогенным травлением

Баранов А.И., Кудряшов Д.А., Уваров А.В., Морозов И.А., Шугуров К.Ю., Максимова А.А., Вячеславова Е.А., Гудовских А.С.

Письма в журнал технической физики, vol. 47(18), pp. 47 , 2021

[DOI:10.21883/PJTF.2021.18.51474.18855] [IF:0.82] [SJR:0.306] [Q3]

#2020

Study of GaP Nucleation Layers Grown on Si by Plasma-Enhanced Atomic Layer Deposition

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Bukatin Anton S., Baranov Artem I., Kudryashov Dmitry A., Kalyuzhnyy Nikolay A., Mintairov Sergey A., Zubkov Vasily I., Yakovlev George E., Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900532 , 2020

[DOI:10.1002/pssa.201900532] [IF:1.97] [SJR:0.532] [Q2]

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov Dmitry A., Gudovskikh Alexander S., Baranov Artem I., Morozov Ivan A., Monastyrenko Anatoly O.

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900534 , 2020

[DOI:10.1002/pssa.201900534] [IF:1.97] [SJR:0.532] [Q2]

The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching

Morozov Ivan, Gudovskikh Alexander, Uvarov Alexander, Baranov Artem, Sivakov Vladimir, Kudryashov Dmitri

Physica Status Solidi (A) Applications and Materials Science, vol. 217(4), pp. 1900535 , 2020

[DOI:10.1002/pssa.201900535] [IF:1.97] [SJR:0.532] [Q2]

Multijunction solar cells concept based on GaP/Si nanostructures

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Zelentsov K. S.

Materials Today: Proceedings, vol. 21, pp. 47—52 , 2020

[DOI:10.1016/j.matpr.2019.07.655] [IF:1.24] [SJR:0.341] [-]

GaPAsN-based light-emitting diode on silicon

Lazarenko Alexandra A., Nikitina Ekaterina V., Gudovskikh Alexander S., Baranov Artem I., Sobolev Maxim S., Pirogov Evgeny V., Egorov Anton Yu

Optics and Laser Technology, vol. 129, pp. 106308 , 2020

[DOI:10.1016/j.optlastec.2020.106308] [IF:4.14] [SJR:0.799] [Q1]

GaNP-based photovoltaic device integrated on Si substrate

Dvoretckaia Liliia N., Bolshakov Alexey D., Mozharov Alexey M., Sobolev Maxim S., Kirilenko Demid A., Baranov Artem I., Mikhailovskii Vladimir Yu, Neplokh Vladimir V., Morozov Ivan A., Fedorov Vladimir V., Mukhin Ivan S.

Solar Energy Materials and Solar Cells, vol. 206, pp. 110282 , 2020

[DOI:10.1016/j.solmat.2019.110282] [IF:7.24] [SJR:1.839] [Q1]

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Baranov Artem I., Gudovskikh Alexander S., Egorov Anton Yu, Kudryashov Dmitry A., Le Gall Sylvain, Kleider Jean Paul

Journal of Applied Physics, vol. 128(2), pp. 23105 , 2020

[DOI:10.1063/1.5134681] [IF:2.75] [SJR:0.699] [Q2]

Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

Uvarov A. V., Gudovskikh A. S., Nevedomskiy V. N., Baranov A. I., Kudryashov D. A., Morozov I. A., Kleider J. P.

Journal of Physics D: Applied Physics, vol. 53(34), , 2020

[DOI:10.1088/1361-6463/ab8bfd]

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Shugurov K. Yu, Mozharov A. M., Bolshakov A. D., Fedorov V. V., Sapunov G. A., Shtrom I. V., Uvarov A. V., Kudryashov D. A., Baranov A. I., Yu Mikhailovskii V., Neplokh V. V., Tchernycheva M., Cirlin G. E., Mukhin I. S.

Nanotechnology, vol. 31(24), pp. 244003 , 2020

[DOI:10.1088/1361-6528/ab76f2] [IF:3.73] [SJR:0.926] [Q1]

Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD

Baranov A. I., Uvarov A. V., Kudryashov D. A., Morozov I. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1482(1), pp. 12017 , 2020

[DOI:10.1088/1742-6596/1482/1/012017] [IF:0.55] [SJR:0.21] [Q4]

Temperature dependence of I-V characteristics in p-Si/MoO x and n-Si/LiF/Ta selective contacts

Maksimova A A, Baranov I A, Kudryashov A D, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695, pp. 012073 , 2020

[DOI:10.1088/1742-6596/1695/1/012073] [IF:0.55] [SJR:0.21] [Q4]

Application of selective contacts for study of silicon surface degradation

Kudryashov D A, Maksimova A A, Baranov A I, Uvarov A V, Morozov I A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695, pp. 012084 , 2020

[DOI:10.1088/1742-6596/1695/1/012084] [IF:0.55] [SJR:0.21] [Q4]

Optical properties of dry etched vertically aligned silicon structures with different geometry

Vyacheslavova E.A., Morozov I.A., Gudovskikh A S, Uvarov A V, Baranov A I, Kudryashov D A

Journal of Physics: Conference Series, vol. 1695(1), pp. 12085 , 2020

[DOI:10.1088/1742-6596/1695/1/012085] [IF:0.55] [SJR:0.21] [Q4]

Capacitance characterization of silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov, D A, Dvoretckaia, L N, Morozov, I A, Uvarov, A V, Vyacheslavova, E A, Shugurov, K Yu, Gudovskikh, A S

Journal of Physics: Conference Series, vol. 1695, pp. 12089 , 2020

[DOI:10.1088/1742-6596/1695/1/012089] [IF:0.55] [SJR:0.21] [Q4]

Defect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition

Baranov A.I., Morozov I.A., Uvarov A V, Kudryashov D A, Gudovskikh A S

Journal of Physics: Conference Series, vol. 1695(1), pp. 12203 , 2020

[DOI:10.1088/1742-6596/1695/1/012203] [IF:0.55] [SJR:0.21] [Q4]

Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching

Baranov A. I., Kudryashov D. A., Morozov I. A., Uvarov A. V., Shugurov K. Yu, Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12089 , 2020

[DOI:10.1088/1742-6596/1697/1/012060] [IF:0.55] [SJR:0.21] [Q4]

Investigation of the temperature dependences of the I-V characteristics of p-Si/MoOxselective contacts

Maksimova A.A., Baranov A. I., Kudryashov D. A., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12169 , 2020

[DOI:10.1088/1742-6596/1697/1/012169] [IF:0.55] [SJR:0.21] [Q4]

Study of Latex sphere mask dry etching in oxygen

Morozov I. A., Vyacheslavova K. A., Gudovskikh A. S., Uvarov A. V., Baranov A. I., Kudryashov D. A.

Journal of Physics: Conference Series, vol. 1697(1), pp. 12192 , 2020

[DOI:10.1088/1742-6596/1697/1/012192] [IF:0.55] [SJR:0.21] [Q4]

Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

Кудряшов Д.А., Гудовских А.С., Максимова А.А., Баранов А.И., Уваров А.В., Морозов И.А.

Письма в журнал технической физики, vol. 46(24), pp. 37 , 2020

[DOI:10.21883/PJTF.2020.24.50427.18478] [IF:0.82] [SJR:0.306] [Q3]

#2019

Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Zelentsov Kirill S., Jaffre Alexandre, Le Gall Sylvain, Darga Arouna, Brezard-Oudot Aurore, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 216(10), pp. 1800617 , 2019

[DOI:10.1002/pssa.201800617] [IF:1.86] [SJR:0.527] [Q2]

Monolith GaAsP/Si dual-junction solar cells grown by MBE

Sobolev M. S., Ilkiv I. V., Lazarenko A. A., Mizerov A. M., Nikitina E. V., Pirogov E. V., Timoshnev S. N., Baranov A. I., Bouravleuv A. D.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12040 , 2019

[DOI:10.1088/1742-6596/1410/1/012040] [IF:0.6] [SJR:0.227] [Q3]

Design and investigation of GaPAsN/Si light-emitting diode

Lazarenko A., Gudovskikh A., Baranov A, Sobolev M, Pirogov E, Nikitina E

Journal of Physics: Conference Series, vol. 1410(1), pp. 12091 , 2019

[DOI:10.1088/1742-6596/1410/1/012091] [IF:0.6] [SJR:0.227] [Q3]

Investigation of ITO magnetron deposition effect on carrier lifetime degradation in silicon wafer

Kudryashov D., Baranov A., Gudovskikh A.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12110 , 2019

[DOI:10.1088/1742-6596/1410/1/012110] [IF:0.6] [SJR:0.227] [Q3]

Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD

Baranov A. I., Morozov I. A., Uvarov A. V., Gudovskikh A. S.

Journal of Physics: Conference Series, vol. 1410(1), pp. 12116 , 2019

[DOI:10.1088/1742-6596/1410/1/012116] [IF:0.6] [SJR:0.227] [Q3]

The effect of optical cooling of the SPM probe in the optomechanical resonator

Dunaevskiy M. S., Alekseev P. A., Sharov V. A., Baranov A.

IOP Conference Series: Materials Science and Engineering, vol. 699(1), pp. 12011 , 2019

[DOI:10.1088/1757-899X/699/1/012011] [IF:0.54] [SJR:0.198]

Revealing low-radiative modes of nanoresonators with internal raman scattering

Baryshnikova K. V., Frizyuk K., Zograf G., Makarov S., Baranov M. A., Zuev D., Milichko V. A., Mukhin I., Petrov M., Evlyukhin A. B.

arXiv, vol. 110(1), pp. 25—30 , 2019

[DOI:10.1134/s0370274x19130046]

Peculiarities of Doped GaP Layers Growth by Plasma Enhanced Atomic Layer Deposition

Gudovskikh A.S., Baranov A., Morozov I, Uvarov A, Kudryashov D A, Kleider J P

None, 2019

#2018

Metal-Dielectric Nanocavity for Real-Time Tracing Molecular Events with Temperature Feedback

Milichko Valentin A., Zuev Dmitry A., Baranov Denis G., Zograf George P., Volodina Katerina, Krasilin,rei A., Mukhin Ivan S., Dmitriev Pavel A., Vinogradov Vladimir V., Makarov Sergey V., Belov Pavel A.

Laser and Photonics Reviews, vol. 12(1), pp. 1700227 , 2018

[DOI:10.1002/lpor.201700227] [IF:11.52] [SJR:4.014] [Q1]

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh A. S., Uvarov A. V., Morozov I. A., Baranov A. I., Kudryashov D. A., Nikitina E. V., Bukatin A. A., Zelentsov K. S., Mukhin I. S., Levtchenko A., Le Gall S., Kleider J. P.

Journal of Renewable and Sustainable Energy, vol. 10(2), pp. 21001 , 2018

[DOI:10.1063/1.5000256] [IF:1.81] [SJR:0.483] [Q3]

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitry A., Lazarenko Alexandra A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Pirogov Evgeny V., Sobolev Maxim S., Zelentsov Kirill S., Egorov Anton Yu, Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Journal of Applied Physics, vol. 123(16), pp. 161418 , 2018

[DOI:10.1063/1.5011371] [IF:2.42] [SJR:0.728] [Q2]

Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

Baranov A. I., Gudovskikh A. S., Kudryashov D. A., Morozov I. A., Mozharov A. M., Zelentsov K. S.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41034 , 2018

[DOI:10.1088/1742-6596/1124/4/041034] [IF:0.6] [SJR:0.227] [Q3]

Silicon doping of GaP layers grown by time-modulated PECVD

Baranov A. I., Morozov I. A., Uvarov A. V., Yakovlev G. E., Kleider J. P.

Journal of Physics: Conference Series, vol. 1124(4), pp. 41036 , 2018

[DOI:10.1088/1742-6596/1124/4/041036] [IF:0.6] [SJR:0.227] [Q3]

Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitriy A., Zelentsov Kirill S., Bukatin Anton S., Kotlyar Konstantin P.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36(2), pp. 02D408 , 2018

[DOI:10.1116/1.5018259]

Optical thermal management and real‐time molecular sensing with hybrid nanocavity (Conference Presentation)

Zuev Dmitry, Milichko Valentin, Baranov Denis, Zograf George, Volodina Katerina, Krasilin,rey, Mukhin Ivan, Dmitriev Pavel, Vinogradov Vladimir, Makarov Sergey, Belov Pavel

None, vol. 10721, pp. 13 , 2018

[DOI:10.1117/12.2321281]

Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices

Kudryashov D. A., Gudovskikh A. S., Baranov A. I.

Semiconductors, vol. 52(13), pp. 1775—1781 , 2018

[DOI:10.1134/S1063782618130092] [IF:0.76] [SJR:0.298] [Q3]

Cellules solaires \`a multijonctions par integration monolithique de nitrures dilues sur substrats d’arseniure de gallium (GaAs) et de silicium (Si): etudes des defauts.

Baranov A

None, 2018

Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide ( GaAs ) and Silicon ( Si ) Wafers : defect studies To cite this version : Cellules solaires \`a multijonctions par integration monolithique de nitrures dilues sur

Baranov Artem

None, 2018

#2017

Influence of PE-ALD of GaP on the Silicon Wafers Quality

Baranov Artem I., Gudovskikh Alexander S., Kudryashov Dmitriy A., Morozov Ivan A., Mozharov Alexey M., Nikitina Ekaterina V., Zelentsov Kirill S., Darga Arouna, Le Gall Sylvain, Kleider Jean Paul

Physica Status Solidi (A) Applications and Materials Science, vol. 214(12), pp. 1700685 , 2017

[DOI:10.1002/pssa.201700685] [IF:1.86] [SJR:0.527] [Q2]

n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD

Gudovskikh Alexander S., Uvarov Alexander V., Morozov Ivan A., Baranov Artem I., Kudryashov Dmitry A., Nikitina Ekaterina V., Kleider Jean Paul

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 14(10), pp. 1700150 , 2017

[DOI:10.1002/pssc.201700150] [IF:0.84] [SJR:0.275] [Q3]

Resonant optical properties of crystalline silicon nanoparticles fabricated by laser ablation-based methods

Dmitriev P. A., Baranov D. G., Milichko V. A., Mukhin I. S., Li Q., Mondal S., Makarov S. V., Samusev A. K., Zograf G. P., Zuev D. A., Makarova E. K., Petrov M. I., Sinev I. S., Gorlach M. A., Frizyuk K. S., Belov P. A.

AIP Conference Proceedings, vol. 1874(1), pp. 40005 , 2017

[DOI:10.1063/1.4998078] [IF:0.42] [SJR:0.19]

Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Baranov A. I., Gudovskikh A. S., Darga A., Le Gall S., Kleider J. P.

Journal of Physics: Conference Series, vol. 917(5), , 2017

[DOI:10.1088/1742-6596/917/5/052027] [IF:0.6] [SJR:0.227] [Q3]

Optomechanical coupling between AFM cantilever and semiconductor laser

Alekseev P. A., Sharov V. A., Mikhaylov A. O., Dunaevskii M. S., Baranov A.

IOP Conference Series: Materials Science and Engineering, vol. 256(1), pp. 12002 , 2017

[DOI:10.1088/1757-899X/256/1/012002] [IF:0.54] [SJR:0.198]

Multifunctional sensing with hybrid nanophotonic structures

Zuev D. A., Baranov D. G., Zograf G. P., Makarov S. V., Volodina K. V., Krasilin A. A., Mukhin I. S., Dmitriev P. A., Vinogradov V. V., Milichko V. A., Pidko E. A.

Progress in Electromagnetics Research Symposium pp. 1491—1493 , 2017

[DOI:10.1109/PIERS.2017.8261982] [IF:0.39] [SJR:0.157]

Admittance spectroscopy of InGaAsN based solar cells

Baranov A. I., Gudovskikh A. S., Kudryashov D. A., Mozharov A. M., Zelentsov K. S., Kleider J. P.

Journal of Physics: Conference Series, vol. 917(5), pp. 524—528 , 2017

[DOI:10.1134/S1063782615040053] [IF:0.6] [SJR:0.227] [Q3]

Polarization-resolved characterization of plasmon waves supported by an anisotropic metasurface

Samusev Anton, Mukhin Ivan, Malureanu Radu, Takayama Osamu, Permyakov Dmitry V., Sinev Ivan S., Baranov Dmitry, Yermakov Oleh, Iorsh Ivan V., Bogdanov,rey A., Lavrinenko,rei V.

Optics Express, vol. 25(26), pp. 32631 , 2017

[DOI:10.1364/oe.25.032631] [IF:4.17] [SJR:1.533] [Q1]

Two-dimensional optical plasmons with mixed polarization on anisotropic resonant metasurface

Samusev Anton, Mukhin Ivan, Malureanu Radu, Takayama Osamu, Permyakov Dmitry V., Sinev Ivan S., Baranov Dmitry, Yermakov Oleh, Iorsh Ivan V., Bogdanov,rey A., Lavrinenko,rei V.

arXiv, 2017

Characterization of GaP/Si heterojunctions by space charge capacitance measurements

Baranov A., Gudovskikh A.S., Morozov I A, Mozharov A, Nikitina E V, Zelentsov K S, Darga A, Gall S L, Kleider J P

None, 2017

#2016

Study of GaP/Si Heterojunction Solar Cells

Gudovskikh A. S., Zelentsov K. S., Baranov A. I., Kudryashov D. A., Morozov I. A., Nikitina E. V., Kleider J. P.

Energy Procedia, vol. 102, pp. 56—63 , 2016

[DOI:10.1016/j.egypro.2016.11.318] [IF:1.77] [SJR:0.545]

Resonant Raman scattering from silicon nanoparticles enhanced by magnetic response

Dmitriev Pavel A., Baranov Denis G., Milichko Valentin A., Makarov Sergey V., Mukhin Ivan S., Samusev Anton K., Krasnok Alexander E., Belov Pavel A., Kivshar Yuri S.

Nanoscale, vol. 8(18), pp. 9721—9726 , 2016

[DOI:10.1039/c5nr07965a] [IF:7.02] [SJR:2.18] [Q1]

Self-adjusted all-dielectric metasurfaces for deep ultraviolet femtosecond pulse generation

Makarov S. V., Tsypkin A. N., Voytova T. A., Milichko V. A., Mukhin I. S., Yulin A. V., Putilin S. E., Baranov M. A., Krasnok A. E., Morozov I. A., Belov P. A.

Nanoscale, vol. 8(41), pp. 17809—17814 , 2016

[DOI:10.1039/c6nr04860a] [IF:7.02] [SJR:2.18] [Q1]

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

Sokolov N. S., Fedorov V. V., Korovin A. M., Suturin S. M., Baranov D. A., Gastev S. V., Krichevtsov B. B., Maksimova K. Yu, Grunin A. I., Bursian V. E., Lutsev L. V., Tabuchi M.

Journal of Applied Physics, vol. 119(2), pp. 23903 , 2016

[DOI:10.1063/1.4939678] [IF:2.42] [SJR:0.728] [Q2]

Femtosecond laser transfer of silicon nanoparticles with enhanced Raman response

Dmitriev P., Baranov D., Makarov S., Milichko V., Mukhin I., Samusev A., Krasnok A., Belov P.

AIP Conference Proceedings, vol. 1748(1), pp. 30001 , 2016

[DOI:10.1063/1.4954347] [IF:0.42] [SJR:0.19]

Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

Baranov A. I., Kleider J. P., Gudovskikh A. S., Darga A., Nikitina E. V., Egorov A. Yu

Journal of Physics: Conference Series, vol. 741(1), pp. 12077 , 2016

[DOI:10.1088/1742-6596/741/1/012077] [IF:0.6] [SJR:0.227] [Q3]

Laser-Induced Periodical Structures Fabrication for Third Harmonic Generation

Voytova T. A., Makarov S. V., Tsypkin A. N., Milichko V. A., Mukhin I. S., Yulin A. V., Putilin S. E., Baranov M. A., Krasnok A. E., Belov P. A.

Journal of Physics: Conference Series, vol. 741(1), pp. 12112 , 2016

[DOI:10.1088/1742-6596/741/1/012112] [IF:0.6] [SJR:0.227] [Q3]

Laser printing of Au/Si core-shell nanoparticles

Zograf G.P., Zuev D.A., Milichko V A, Mukhin I S, Baranov M A, Ubyivovk E V, Makarov S V, Belov P A

Journal of Physics: Conference Series, vol. 741, pp. 12119 , 2016

[DOI:10.1088/1742-6596/741/1/012119/] [IF:0.6] [SJR:0.227] [Q3]

Raman scattering governed by dark resonant modes in silicon nanoparticles

Friziuk K. S., Milichko V. A., Petrov M. I., Zuev D. A., Baranov A. V., Baranov M. A., Makarov S. V., Krasnok A. E., Belov P. A., Mukhin I. S.

Proceedings of the International Conference Days on Diffraction, DD 2016 pp. 155—160 , 2016

[DOI:10.1109/DD.2016.7756833] [SJR:0.129]

Optically asymmetric structures for transparent electrodes

Kovrov A. E., Baranov D. A., Shalin A. S., Mukhin I. S., Simovski C. R.

Proceedings of the International Conference Days on Diffraction, DD 2016 pp. 234—236 , 2016

[DOI:10.1109/DD.2016.7756848] [SJR:0.129]

Reversible and non-reversible tuning of hybrid optical nanoresonators

Zuev D. A., Makarov S. V., Milichko V. A., Krasnok A. E., Belov P. A., Mukhin I. S., Morozov I. A., Baranov D. G., Miroshnichenko A. E.

Proceedings of the International Conference Days on Diffraction, DD 2016 pp. 464—467 , 2016

[DOI:10.1109/DD.2016.7756895] [SJR:0.129]

Hybrid localized waves supported by resonant anisotropic metasurfaces

Bogdanov A. A., Yermakov O. Y., Ovcharenko A. I., Song M., Baranov D. A., Sinev I. S., Mukhin I. S., Samusev A. K., Iorsh I. V., Lavrinenko A. V., Kivshar Yu S.

2016 Conference on Lasers and Electro-Optics, CLEO 2016 pp. 1—2 , 2016

[DOI:10.1364/cleo_qels.2016.fm3d.6] [SJR:0.136]

Etude des proprietes photoelectriques de couches de GaP deposees \`a basse temperature par des mesures de conductivite et de photocourant module

Levtchenko A., Brezard-Oudot A., Alvarez A Jaffre J, Baranov A, Morozov I, Kudryashov D A, Gudovskikh A S, Djebbour S L Gall Z, Kleider J P

None, 2016

Electronic properties of thin GaP layers grown on silicon wafers

Baranov A., Gudovskikh A.S., Morozov I, Mozharov A, Darga A, Kleider J P

None, 2016

Defect study of Ga (In) P (NAs) based solar cells grown on silicon

Baranov A., Gudovskikh A.S., Nikitina E V, Kleider J P, Darga A

None, 2016

Defect characterization of GaP/Si solar cells

Gudovskikh A.S., Zelentsov K.S., Baranov A, Kudryashov D A, Morozov I A, Nikitina E V, Kleider J P

None, 2016

Том. 102. Proceedings of the E-MRS Spring Meeting Symposium T-Advanced Materials and Characterization Techniques for Solar Cells III, 2016.-Сер. Proceedings of the E-MRS Spring \ldots

Kudryashov Dmitry, Morozov Ivan, Baranov Artem, Gudovskikh Alexander, Zelentsov, \»Unal M., Turan R., Tankut A, \cColakoǧlu T, S\»okmen I, Kaminski P M, Isherwood P J M, Womack G, Walls J M, Nikitina E V, Kleider J P, Goffin N, Woolley E, Lisco F, Claudio G, Tyrer J, G\»ull\»u H H, Kuznets, Parlak M, A Zatsepin

None, 2016

#2015

Broadband antireflective coatings based on two-dimensional arrays of subwavelength nanopores

Baranov D. A., Dmitriev P. A., Mukhin I. S., Samusev A. K., Belov P. A., Simovski C. R., Shalin A. S.

Applied Physics Letters, vol. 106(17), pp. 171913 , 2015

[DOI:10.1063/1.4919589] [IF:3.81] [SJR:1.343] [Q1]

Antireflective properties of periodic nanopore arrays

Dmitriev Pavel A., Baranov Dmitriy A., Mukhin Ivan S., Samusev Anton K., Belov Pavel A., Simovski Constantin R., Shalin Alexander S.

Proceedings of the International Conference Days on Diffraction 2015, DD 2015 pp. 81—86 , 2015

[DOI:10.1109/DD.2015.7354837]

Admittance spectroscopy of Ga (In) P (NAs) based solar cells grown on silicon

Baranov A., Gudovskikh A.S., Nikitina E V, Kleider J P, Darga A

None, 2015

Deep-level transient spectroscopy (DLTS) TCAD-based simulation

Darga A., Diouf D., Baranov A, Kleider J P

None, 2015

#2013

Magnetic anisotropy of cobalt nanoparticle 2D arrays grown on corrugated MnF 2 (1 1 0) and CaF 2 (1 1 0) surfaces

Baranov D. A., Krichevtsov B. B., Gastev S. V., Banschikov A. G., Fedorov V. V., Koshmak K. V., Suturin S. M., Sokolov N. S.

Applied Surface Science, vol. 267, pp. 196—199 , 2013

[DOI:10.1016/j.apsusc.2012.10.006] [IF:6.39] [SJR:1.23] [Q1]

Proximity effects and exchange bias in Co/MnF2(111) heterostructures studied by x-ray magnetic circular dichroism

Suturin S. M., Fedorov V. V., Banshchikov A. G., Baranov D. A., Koshmak K. V., Torelli P., Fujii J., Panaccione G., Amemiya K., Sakamaki M., Nakamura T., Tabuchi M., Pasquali L., Sokolov N. S.

Journal of Physics Condensed Matter, vol. 25(4), pp. 46002 , 2013

[DOI:10.1088/0953-8984/25/4/046002] [IF:2.74] [SJR:0.936] [Q1]

Cobalt epitaxial nanoparticles on CaF 2 /Si(111): Growth process, morphology, crystal structure, and magnetic properties

Sokolov N. S., Suturin S. M., Krichevtsov B. B., Dubrovskii V. G., Gastev S. V., Sibirev N. V., Baranov D. A., Fedorov V. V., Sitnikova A. A., Nashchekin A. V., Sakharov V. I., Serenkov I. T., Shimada T., Yanase T., Tabuchi M.

Physical Review B — Condensed Matter and Materials Physics, vol. 87(12), pp. 125407 , 2013

[DOI:10.1103/PhysRevB.87.125407]

Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

Baranov A. I., Gudovskikh A. S., Nikitina E. V., Egorov A. Yu

Technical Physics Letters, vol. 39(12), pp. 1117—1120 , 2013

[DOI:10.1134/S1063785013120171] [IF:1.01] [SJR:0.446] [Q2]